2000
DOI: 10.1002/1521-3951(200007)220:1<517::aid-pssb517>3.0.co;2-p
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Improvement in the Properties of Ag-Doped YBa2Cu3O7-x Grain Boundary Josephson Junctions

Abstract: Ag‐doped YBa2Cu3O7–x (YBCO) thin films using 5 to 20 wt% Ag‐doped YBCO targets have been grown by a dc sputtering technique on SrTiO3 bicrystals. Critical currents of 4 to 5 × 106 A/cm2 at 77 K were measured in YBCO films doped with 5 wt% Ag which has been found to be higher than the value of 1 × 106 A/cm2 measured in undoped samples. The normal resistivity decreases by a doping of 5 wt% Ag and increases for higher Ag concentrations. The critical temperature, Tc, of the Ag‐YBCO films remained unchanged at 92 K… Show more

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“…The primary requirement for thin film deposition is a clean substrate surface, and several oxide substrates have been used for the growth of YBa 2 Cu 3 O x (YBCO) high T c superconducting thin film, including SrTiO 3 , LaAlO 3 , sapphire, and MgO. [ 1–15 ] Among all these oxide substrates, single‐crystal MgO substrates are favored for the high T c superconducting thin films deposition due to their low index of refraction ( n = 1.73), high melting point of 2976 °C, low dielectric loss, similar thermal expansion coefficient as that of YBCO thin films, low cost, and growth of epitaxial development of YBCO thin films formed on them despite a considerable lattice mismatch (≈of 9%). [ 16–20 ] Various devices, including step‐edges, Josephson junction (JJ)‐based devices, and superconducting quantum interference devices (SQUIDs), are made with a thin film of YBCO grown on MgO substrates.…”
Section: Introductionmentioning
confidence: 99%
“…The primary requirement for thin film deposition is a clean substrate surface, and several oxide substrates have been used for the growth of YBa 2 Cu 3 O x (YBCO) high T c superconducting thin film, including SrTiO 3 , LaAlO 3 , sapphire, and MgO. [ 1–15 ] Among all these oxide substrates, single‐crystal MgO substrates are favored for the high T c superconducting thin films deposition due to their low index of refraction ( n = 1.73), high melting point of 2976 °C, low dielectric loss, similar thermal expansion coefficient as that of YBCO thin films, low cost, and growth of epitaxial development of YBCO thin films formed on them despite a considerable lattice mismatch (≈of 9%). [ 16–20 ] Various devices, including step‐edges, Josephson junction (JJ)‐based devices, and superconducting quantum interference devices (SQUIDs), are made with a thin film of YBCO grown on MgO substrates.…”
Section: Introductionmentioning
confidence: 99%