In Situ Nanoscale Electric Field Control of Magnetism by Nanoionics

Zhu, Xiaojian; Zhou, Jian; Chen, Lin; Guo, Shanshan; Gang, Liu; Li, Run Wei; Lü, Wei

doi:10.1002/adma.201601425

Cited by 58 publications

(46 citation statements)

References 51 publications

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“…[164,165] In this respect, Zhu et al [164] reported on ≈100% magnetization modulation of magnetic domains and reversible domain wall motion over a distance of ≈100 nm in SRO/LiFe 5 O 8 layers, by controlling the deintercalation/intercalation of Li + ions. [164,165] In this respect, Zhu et al [164] reported on ≈100% magnetization modulation of magnetic domains and reversible domain wall motion over a distance of ≈100 nm in SRO/LiFe 5 O 8 layers, by controlling the deintercalation/intercalation of Li + ions.…”

Section: Me Coupling Via Ionic Intercalationmentioning

confidence: 99%

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

2019

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activities. [1][2][3][4][5][6][7][8][9][10][11][12] From a technological perspective, several low-power ME applications have been envisioned, comprising devices for memory storage and processing, [13,14] tuning and filtering of RF/microwave signals, [15,16] energy conversion and harvesting, [17,18] sensing, [19,20] and actuation. [21,22] By definition, the direct ME effect is manifested when an electric polarization P is induced by usage of a magnetic field H in accordance with Δ Δ to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems. chemical control of the physical (magnetic) properties in metals and oxide nanostructures; electrostatic doping via field-effect; reversible magnetic phase transitions induced with ionic liquid charging; spintronics; printed electronics; fabrication of solution-processed devices (transistors, etc.)There are some nontrivial reasons explaining why solid/ liquid ME composites developed later than all-solid-state approaches. From an experimental perspective, the usage of conventional aqueous electrolytes poses some restrictions in terms of the operating conditions. Concerning the applied voltage, water electrolysis already occurs at a low voltage of

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Section: Me Coupling Via Ionic Intercalationmentioning

confidence: 99%

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

2019

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“…Apart from this, a new promising class of Li‐based RS materials has recently been observed . Such a class, which embodies oxide‐based RS devices for memristive systems with Li‐based nanobatteries, is of substantial technological relevance to the state‐of‐the‐art.…”

Section: Introductionmentioning

confidence: 99%

Direct Evidence of Lithium Ion Migration in Resistive Switching of Lithium Cobalt Oxide Nanobatteries

Nguyen

Van

Senzier

et al. 2018

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Lithium cobalt oxide nanobatteries offer exciting prospects in the field of nonvolatile memories and neuromorphic circuits. However, the precise underlying resistive switching (RS) mechanism remains a matter of debate in two-terminal cells. Herein, intriguing results, obtained by secondary ion mass spectroscopy (SIMS) 3D imaging, clearly demonstrate that the RS mechanism corresponds to lithium migration toward the outside of the Li CoO layer. These observations are very well correlated with the observed insulator-to-metal transition of the oxide. Besides, smaller device area experimentally yields much faster switching kinetics, which is qualitatively well accounted for by a simple numerical simulation. Write/erase endurance is also highly improved with downscaling - much further than the present cycling life of usual lithium-ion batteries. Hence very attractive possibilities can be envisaged for this class of materials in nanoelectronics.

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“…Such a device can show tunnel magnetoresistance (TMR) effects with a high (low) resistance if the magnetization directions of the two ferromagnetic electrodes are parallel (antiparallel). [26] Magnetic domain wall motion, driven by the expansion of the magnetic domains, was further observed for distances over 100 nm. When the ZnO film is thin enough to serve as an electron tunneling layer, TMR effect can be observed from the electrically controlled formation of MTJs (Figure 13j).…”

Section: Magnetic Nanostructuresmentioning

confidence: 91%

“…Moreover, the filament was found to grow from the anode toward the cathode and was composed of discrete Pd nanoparticles, suggesting that the mobility and the redox rate of Pd 2+ ions in SiO x dielectric film are low. [26] Under a reversed bias voltage, the removed Li + ions move back into the switching material, which increases the Li content and restores the device to the HRS. These materials generally have cations forming weak ionic bonds with the immobile anions.…”

Section: Cation-driven Rs Effectsmentioning

confidence: 99%

“…One typical example is the magnetic tunneling junction (MTJ), which consists of a thin tunneling layer sandwiched between two ferromagnetic metal electrodes. [26,111,112] For instance, in LiFe 5 O 8−x films it was shown that removing Li + ions from the film during the SET process increases the valence state of the Fe ions, which can lead to an increase of the local magnetization intensity and the growth of the magnetic domains. Yang et al showed that in a Co/ZnO/Fe sandwich structure, by carefully controlling the growth of a Co filament in the ZnO film, the thickness of the ZnO insulating layer between the Co filament (which acts as an extension of the Co electrode) and the Fe electrode can be precisely controlled, as shown in Figure 13i.…”

Section: Magnetic Nanostructuresmentioning

confidence: 99%

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Nanoionic Resistive‐Switching Devices

Zhu

Lee

Lü

2019

Adv Elect Materials

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devices have opened up promising opportunities for electronic circuit applications beyond energy storage. One representative example is ionic resistive-switching (RS) devices (also called memristive devices or memristors), [3][4][5] which can be used as a nonvolatile memory element due to its excellent performance such as high switching speed (<1 ns), [6] good retention (>10 years), [7] good endurance (>10 9 ), [8] as well as high device scalability. [9] The RS effect refers to the phenomenon that the resistance of a dielectric thin film, typically sandwiched between two electrodes, can be reversibly modulated by an electric field. [2] In ionic RS devices, the mechanism originates from the rearrangement of atoms/ions in the dielectric thin film through ionic drift/ diffusion and electrochemical processes that lead to the formation/rupture of nanoscale conductive paths (filaments) between the two electrodes. [10] Controlling these internal ionic processes will enable the design and implementation of better engineered devices with improved performance and reliability. Additionally, recent studies show that the internal ionic processes during RS can be used to faithfully emulate many biological effects that are critical for learning and memory, allowing efficient neuromorphic systems to be implemented using solid-state devices and networks. [11][12][13] Controlled ionic processes can also be used to directly modify the composition and/or structure of the material itself at the atomic scale, allowing new nanostructures to be built on the fly, in a reconfigurable fashion.In this review, we will first discuss the switching mechanism of ion-induced RS (memristive) effects in nanoscale solid-state thin films, followed by discussions on controlling and utilization of the ionic effects to implement biological synaptic functions, and to reduce device variation and improve device stability. New concepts of material tuning enabled by controlled ionic process will be introduced at the end. Ion-Induced RS EffectSo far, ion-driven RS effects have been observed in a large variety of materials, ranging from oxides, halides, to chalcogenides, etc. [2,[13][14][15] Based on the types of ions involved during the RS process, the switching mechanism can be divided to three categories: cation-driven RS effects, anion-driven RS effects, and cation and anion jointly driven RS effects.Advances in the understanding of nanoscale ionic processes in solid-state thin films have led to the rapid development of devices based on coupled ionic-electronic effects. For example, ion-driven resistive-switching (RS) devices have been extensively studied for future memory applications due to their excellent performance in terms of switching speed, endurance, retention, and scalability. Recent studies further suggest that RS devices are more than just resistors with tunable resistance; instead, they exhibit rich and complex internal ionic dynamics that equip them with native information-processing capabilities, particularly in the temporal domain. RS effec...

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In Situ Nanoscale Electric Field Control of Magnetism by Nanoionics

Cited by 58 publications

References 51 publications

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites

Direct Evidence of Lithium Ion Migration in Resistive Switching of Lithium Cobalt Oxide Nanobatteries

Nanoionic Resistive‐Switching Devices

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