1995
DOI: 10.1143/jjap.34.2430
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In Situ Monitoring of Selective Copper Deposition Processes in a Metal-Organic Chemical Vapor Deposition Using Fourier-Transform Infrared Reflection-Absorption Spectroscopy

Abstract: Vascular and clinical assessments of arterio-venous fistula (AVF) function and access are important in patients undergoing or preparing to undergo renal dialysis. Objective assessment techniques include colour duplex ultrasound and more recently medical infrared thermography. Ideally, these should help assess problems relating to fistula failure or to vascular steal from the hand which can result from excessive fistula blood flow. The clinical value of thermography, as yet, has not been assessed for this patie… Show more

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Cited by 12 publications
(4 citation statements)
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“…silicon wafers that had preliminary received a 200 nm TiN coat deposited by CVD (thermally with TDMAT and treated with H 2 plasma). As a vacuum break is necessary in our setup, the TiN surface was cleaned with a HF solution to remove any residual oxide . The experiments were performed over a substrate temperature range of 140−300 °C.…”
Section: Methodsmentioning
confidence: 99%
“…silicon wafers that had preliminary received a 200 nm TiN coat deposited by CVD (thermally with TDMAT and treated with H 2 plasma). As a vacuum break is necessary in our setup, the TiN surface was cleaned with a HF solution to remove any residual oxide . The experiments were performed over a substrate temperature range of 140−300 °C.…”
Section: Methodsmentioning
confidence: 99%
“…[25±29] Hence, the surface chemistry in copper deposition from Cu(hfac)-VTMS is expected to resemble that of Cu(hfac) 2 , [25,30] and proposing a mechanism for deposition from Cu(hfac) 2 based on the results from Cu(hfac)VTMS seems reasonable.…”
Section: Cu(hfac) 2 As the Precursormentioning
confidence: 99%
“…400,401 In this case, the presence of H 2 during the process [which is usually the case for processes based on Cu(II) derivatives] is an unfavourable factor for the selectivity, as it results in reduction of the SiO 2 surface layer and generation of OH groups. 402 A study of nucleation upon decomposition of (HFA)Cu(VTMS) on a SiO 2 surface `freed' from the OH groups showed that under these conditions, an increase in the flow rate of the starting CCC virtually does not affect selectivity; 403 the pressure in the reactor becomes the main parameter for controlling selectivity.…”
Section: Deposition Of Copper Films In `Metal ± Dielectric' Systemsmentioning
confidence: 99%