Four new β-diketonate copper(I) complexes containing the ene−yne 2-methyl-1-hexen-3-yne (MHY), [Cu(hfac)(MHY)] (hfac = hexafluoroacetylacetonate), [Cu(tfac)(MHY)] (tfac =
1,1,1-trifluoroacetylacetonate), [Cu(pfac)(MHY)] (pfac = perfluoroacetylacetonate), and [Cu(acac)(MHY)] (acac = acetylacetonate), have been synthesized and characterized by FT-IR
and 1H and 13C NMR and three of them by an X-ray structural and elemental analysis. In
these complexes, the triple bond is η2-coordinated to the copper atom while the double bond
stays free. A theoretical study demonstrates that for these complexes a planar coordination
around the copper ion is the most stable, with energy differences of 57.7, 44.9, 39.3, and
62.7 kJ/mol for the acac, tfac, hfac, and pfac complexes, respectively, when compared to a
tetrahedral structure, which is another possible coordination mode for Cu(I). We also found
that the orbital contribution of the fluorine atoms does not seem to be very relevant for the
Cu−alkyne bond, but rather weak fluorine−hydrogen bonds detected in the X-ray structures
can explain the following experimentally found stability order:
[Cu(acac)(MHY)] < [Cu(tfac)(MHY)] < [Cu(hfac)(MHY)] = [Cu(pfac)(MHY)]
The decomposition of such compounds to give Cu(0), MHY, and [Cu(β-diketonate)2] seems
to indicate a similar thermodynamic stability of the products. However, experimentally the
complex with the pfac ligand shows a greater stability while the acac complex decomposes
easily. The more stable and volatile compounds are obtained when the β-diketonate ligand
is hexafluoropentanedionate, which has been used as a precursor in copper CVD experiments.
So, [Cu(hfac)(MHY)] (mp = 13.0 °C, bp = 207.2 °C), which displays a partial pressure of 110
mTorr at 21.3 °C, was used with 5% (wt) of pure MHY as a stabilizing agent. Using a direct
liquid injection and vaporizer system, pure copper films were deposited in a cold-wall LPCVD
system with helium as carrier gas on 4 in. diameter silicon wafers covered with a 200 nm
thick CVD TiN film as a barrier. The copper films were deposited at a precursor vaporization
temperature of 85 °C and deposition temperature of 140−300 °C. In this temperature range,
the growth rate demonstrates the two usual different regimes: the mass-flow-controlled
regime above 220 °C with a growth rate as high as 260 nm/min and the surface-limited
regime below this temperature. For this last regime, the activation energy is only around
30 kJ/mol, which is a very low value when compared to what was obtained for processes
using other Cu(I) β-diketonates. Shiny, adhesive copper films with a thickness of 500−1000
nm had resistivities of 2.3−4.5 μΩ cm, depending on the substrate temperature. ESCA
analysis of the Cu layers revealed that the Cu films were very pure but contained 2.7 atom
% of oxygen impurities due to leaks or residual H2O in the CVD system which were still
present after 10 min of Ar sputtering.