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The surface kinetics of low temperature (100 C < T < 150 C) CVD of copper from Cu(hfac)VTMS are studied, and a novel monorhoic model is applied to describe these kinetics. This model contains no reversible reactions and only those reactions between gas phase and surface species are allowed. A mechanism, consisting of four reaction steps, is proposed and is found to fit the experimental data well, even when the data are from experiments conducted at two different temperatures. The desorption of *Cu(hfac) 2 appears to be very rapid. Based on the results, a mechanism is proposed to describe literature results on a Cu(hfac) 2 CVD system.

A new model is used to describe the surface kinetics in copper chemical vapor deposition from Cu(hfac)VTMS. This model is based on nonequilibria. It provides a mechanism that satisfactorily describes the kinetics. In this mechanism, next to the disproportional growth reaction, a parallel reduction reaction is proposed, which accounts for the observed growthrate enhancement by hydrogen. The new model is herein more convenient than a conventional Langmuir-type model. The reaction-rate coefficients of all reactions in the mechanism are calculated. The *VTMS desorption appears to be fast. The reactions involving a Cu(hfac)-VTMS dissociation have a low reaction-rate constant. Both observations confirm results reported by several other authors.