In situ monitoring of floating-zone-grown Si(111) crystal structure using the behavior of ridgelike protrusions

Fritzler, K. B.; Trukhanov, E. M.; Kalinin, V. P.; Smirnov, P. L.; Колесников, А. В.; Василенко, А. Т.

doi:10.1134/s1063785007060223

Cited by 5 publications

(2 citation statements)

References 1 publication

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“…In this case the formation of the external facet is disrupted frequently, leading to steps on the crystal surface [5]. The presence of the growth ridges during growth of Cz and Fz silicon crystals is commonly used as an indicator whether the crystal is growing dislocation-free [6,7]. When dislocations form during the growth process, the growth kinetics of the facet planes change [8], leading to a reduction of the necessary supercooling for the edge facets to grow.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method

Stockmeier

Kranert

Fischer

et al. 2019

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method

Stockmeier

Kranert

Fischer

et al. 2019

Journal of Crystal Growth

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“…Morphology of the ridges for FZ crystals of 1 1 1 orientation up to 5" diameter has been described and a loss of particular ridge shapes when the crystal dislocates is suggested [11]. Size of the ridge has been theoretically calculated for a 1 0 0 4" Cz crystal depending strongly on the temperature gradient by the crystallization interface at the triple point [12].…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

Plāte¹,

Krauze

Virbulis

2018

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract.During the growth of large diameter silicon single crystals with the industrial floating zone method, undesirable level of thermal stress in the crystal is easily reached due to the inhomogeneous expansion as the crystal cools down. Shapes of the phase boundaries, temperature field and elastic material properties determine the thermal stress distribution in the solid mono crystalline silicon during cylindrical growth. Excessive stress can lead to fracture, generation of dislocations and altered distribution of intrinsic point defects. Although appearance of ridges on the crystal surface is the decisive factor of a dislocation-free growth, the influence of these ridges on the stress field is not completely clear. Here we present the results of thermal stress analysis for 4" and 5" diameter crystals using a quasi-stationary three dimensional mathematical model including the material anisotropy and the presence of experimentally observed ridges which cannot be addressed with axis-symmetric models. The ridge has a local but relatively strong influence on thermal stress therefore its relation to the origin of fracture is hypothesized. In addition, thermal stresses at the crystal rim are found to increase for a particular position of the crystal radiation reflector.

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Numerical study of silicon crystal ridge growth

Barinovs¹,

Sabanskis²,

Muižnieks³

2014

Journal of Crystal Growth

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In situ monitoring of floating-zone-grown Si(111) crystal structure using the behavior of ridgelike protrusions

Cited by 5 publications

References 1 publication

Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method

Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method

Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

Numerical study of silicon crystal ridge growth

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