In Situ Monitoring of Electroepitaxial Growth of Thick AlGaAs Layers

Abstract

In situ growth monitoring technique has been used to analyse growth disturbances during the liquid phase electroepitaxial growth of thick AlGaAs 1ayers. It allowed us to explain the nature of growth instability occurring at the end of the growth and affecting the maximum thickness of AIGaAs layers obtainable by liquid phase electroepitaxy. .

Electroepitaxial Growth of GaSb and AlGaSb Thick Epitaxial Layers

“…This process is combined with an initial supersaturation of the growth solution. In order to optimise this procedure and observe the growth/dissolution processes at the • beginning of the layer deposition we use an in situ growth monitoring technique [4,5]. This allowed us to protect a planarity of the substrate and to obtain high quality substrate-epilayer interface even for p-type substrates.…”