Liquid Phase Epitaxy

Tailoring the optical properties of rubrene films through epitaxy-induced amorphous-to-crystal transition

“…, for t s ≥ t c , a fully crystalline and homogeneous film consisting of flat and large crystalline domains originating from the coalescence of the islands is obtained. Interestingly, a similar mechanism occurs with inorganic materials and is known as solid-phase epitaxy, 56 where a metastable amorphous layer grown on a crystalline templating substrate undergoes the amorphous-to-crystal transition via epitaxy, starting from the interface with the crystalline substrate. The fundamental difference is that, while in solid-phase epitaxy the transition is induced by external factors, such as heating or ion bombardment, in the case of RUB films the amorphous-to-crystal transition occurs spontaneously at room temperature.…”

A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition

“…Because of the ZnO resultants having more strongly bound to each other than to the Si substrate and the high transport speed, the new arriving ZnO resultants preferentially deposit on the nuclei layer rather than or have no time to fill in the vacancies in the nuclei layer. Thus this process is the columnar growth mode and when the film thickens, the columns tend to merge and to cover the whole substrate surface, [16] as indicated in Fig. 2(b).…”

“…Thus we think that this process is similar to the famous Frank-van der Merwe mode (layer-by-layer mode). [16] Derived by this mechanism a single crystal ZnO film with very smooth surface can be obtained. (ii) If the BDF and OCGF are increased a little, the rate of the ZnO resultants arriving at the substrate will be improved.…”

A Novel Route to Fibers with Incongruent and Volatile Crystalline Semiconductor Cores: GaAs

“…One route to the liquid phase growth of crystals that evolve volatile species during heating is through the use of a flux that combines with the desired phase to form a homogeneous, low-temperature melt, often based on a eutectic phase diagram. Commonly referred to as liquid phase epitaxy (LPE), it has been applied to the growth of bulk crystals and thin films of high-volatility compounds, including GaAs. , The flux-induced suppression of the liquidus temperature, in combination with the stable multicomponent melt, greatly reduces the effective volatility. Ideally, once the melt cools and solidifies, the desired phase crystallizes separately from the flux phase.…”

“…Commonly referred to as liquid phase epitaxy (LPE), it has been applied to the growth of bulk crystals and thin films of high-volatility compounds, including GaAs. 25,26 The fluxinduced suppression of the liquidus temperature, in combination with the stable multicomponent melt, greatly reduces the effective volatility. Ideally, once the melt cools and solidifies, the desired phase crystallizes separately from the flux phase.…”