1994
DOI: 10.1016/0022-0248(94)90836-2
|View full text |Cite
|
Sign up to set email alerts
|

In-situ monitoring by spectroscopic ellipsometry in ZnSe crystal growth by molecular beam epitaxy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

1996
1996
2022
2022

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(1 citation statement)
references
References 13 publications
0
1
0
Order By: Relevance
“…Recently, several studies have employed spectroscopic ellipsometry ͑SE͒ to determine the optical dielectric functions of ZnSe films, without the need for KK analysis. [11][12][13][14][15][16][17][18] These studies cover measurements over the spectral range ͑1.5-6 eV͒ and include both single-and polycrystalline samples. Meanwhile, overlayer effects were minimized by either physical removal through chemical etching or by mathematical removal within an optical model.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, several studies have employed spectroscopic ellipsometry ͑SE͒ to determine the optical dielectric functions of ZnSe films, without the need for KK analysis. [11][12][13][14][15][16][17][18] These studies cover measurements over the spectral range ͑1.5-6 eV͒ and include both single-and polycrystalline samples. Meanwhile, overlayer effects were minimized by either physical removal through chemical etching or by mathematical removal within an optical model.…”
Section: Introductionmentioning
confidence: 99%