In-Situ Metrology: the Path to Real-Time Advanced Process Control

Rubloff, Gary W.

doi:10.1063/1.1622532

Cited by 4 publications

(2 citation statements)

References 18 publications

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“…17,18 Though primarily designed to monitor the arrival of precursor to a MOCVD reactor, 19 this sensor has also been used for in-line mass-flow controller calibration, 20 and for in situ chemical sensing downstream to a tungsten CVD reactor in order to provide real-time film thickness metrology as required for real-time advanced process control (APC). [21][22][23] The sensor measures the speed of sound by determining the fundamental resonant frequency for gas mixtures within a thermally controlled Helmholtz resonant cavity. The resonant frequency of the gas mixture is directly related to its average molecular weight, as shown in Eq.…”

Section: Sensor Overviewmentioning

confidence: 99%

Real-time acoustic sensing and control of metalorganic chemical vapor deposition precursor concentrations delivered from solid phase sources

Henn-Lecordier

Kidder

Rubloff

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We have investigated the performance and potential benefit of acoustic sensing for real-time monitoring and closed loop control of binary gas mixture compositions delivered from low vapor pressure metalorganic sources. Two solid phase sources were investigated in the presence of H 2 as a carrier gas: (1) trimethylindium (TMI) and (2) bis(cyclopentadienyl) magnesium ͑Cp 2 Mg͒, which have room temperature ͑25°C͒ vapor pressures of 2.5 and 0.04 Torr, respectively. An acoustic sensor was implemented on the gas feed line to measure the concentration-dependent speed of sound in the gas mixture. This enabled sensitivity and control at precursor levels as low as 0.6 ppm in H 2. Closed loop process control was implemented to maintain TMI and Cp 2 Mg concentration target in the presence of intentionally introduced long term temperature drifts. Despite induced variations of the precursor vapor pressure up to 50%, the delivered composition was controlled to within ±0.15% for TMI (at 0.5 mol% set point) and ±0.3% for Cp 2 Mg (at 0.01 mol% set point). Short term variability could also be substantially reduced by the control scheme. This work demonstrates the feasibility of sensor-driven control systems for stable delivery of low vapor pressure, normally problematic precursor materials. In turn, this opens the door to utilization of a broader range of species which can be synthesized as chemical precursors.

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Section: Sensor Overviewmentioning

confidence: 99%

Real-time acoustic sensing and control of metalorganic chemical vapor deposition precursor concentrations delivered from solid phase sources

Henn-Lecordier

Kidder

Rubloff

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Recognizing and fixing the abnormal conditions of the manufacturing processes is a critical task for enhancing the yield. Currently, APC (Advanced Process Control) is being introduced as a vital method to enhance the productivity of equipments by controlling the processes affected by systematic variations [1,2]. FDC (Fault Detection and Classification), the methodology to detect the faults of a process quickly and to diagnose their causes, is one of the main components of APC, together with R2R (Run-to-Run) control that is aimed at adjusting input parameters in a run-by-run manner.…”

Section: Introductionmentioning

confidence: 99%

Process start/end event detection and dynamic time warping algorithms for run-by-run process fault detection

Choi

Kim

et al. 2007

2007 International Symposium on Semiconductor Manufacturing

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In semiconductor/FPD (Flat Panel Display) manufacturing environments, APC (Advanced Process Control) is a vital task for enhancing yield. The APC technology improves the productivity of equipments based on two main control mechanisms: fault management and R2R (Run-to-Run) recipe correction. This paper focuses on FDC (Fault Detection and Classification) for the fault management, and proposes a runby-run process fault detection method. The method consists of a process event detection algorithm to segment process data, and a pattern matching technique to classify the segmented data as normal or abnormal state. Experiments using the data collected from a RIE (Reactive Ion Etching) process show that the proposed method is able to recognize normal/abnormal states with high accuracy.

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Demonstration of spatially programmable chemical vapor deposition: Model-based uniformity∕nonuniformity control

Sreenivasan

Adomaitis

Rubloff

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inDevelopment of a spatially controllable chemical vapor deposition reactor with combinatorial processing capabilities Rev. Sci. Instrum. 76, 062217 (2005); 10.1063/1.1906183 Effect of NH 3 thermal treatment on an atomic layer deposited on tungsten films and formation of W-B-N A new chemical vapor deposition ͑CVD͒ reactor design was developed to intentionally induce spatially nonuniform film thickness deposition patterns on a single wafer. A segmented showerhead design allows individual regions of a wafer to be exposed to different precursor concentrations simultaneously during a run resulting in different thickness profiles on the wafer and a thickness gradient at the boundaries between segment regions. Different recipes were cycled through each of the segments in a sequence of deposition experiments to develop a model relating precursor concentration to film thickness in each segment region. As a demonstration of spatial programmability, the system was reprogramed using this model to produce uniform thickness amongst the segments; intersegment uniformity approaching 0.60% ͑thickness standard deviation͒ was demonstrated. Potential applications of this reactor design to combinatorial CVD are discussed.

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In-Situ Metrology: the Path to Real-Time Advanced Process Control

Cited by 4 publications

References 18 publications

Real-time acoustic sensing and control of metalorganic chemical vapor deposition precursor concentrations delivered from solid phase sources

Real-time acoustic sensing and control of metalorganic chemical vapor deposition precursor concentrations delivered from solid phase sources

Process start/end event detection and dynamic time warping algorithms for run-by-run process fault detection

Demonstration of spatially programmable chemical vapor deposition: Model-based uniformity∕nonuniformity control

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