2011
DOI: 10.1016/j.actamat.2011.04.031
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In situ lorentz TEM magnetization study of a Ni–Mn–Ga ferromagnetic shape memory alloy

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Cited by 38 publications
(18 citation statements)
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“…Therefore the objective lens of the microscope is usually switched off as detailed in the next section. In situ magnetising experiments may be carried out using the field from the weakly excited objective lens [18] or through special rods that can apply steady or pulsed fields [19,20].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore the objective lens of the microscope is usually switched off as detailed in the next section. In situ magnetising experiments may be carried out using the field from the weakly excited objective lens [18] or through special rods that can apply steady or pulsed fields [19,20].…”
Section: Introductionmentioning
confidence: 99%
“…These results demonstrate that crystallographic and magnetic domains can be observed in the same area using the current optical system. Although the magnetic domains (Fresnel and Foucault images) and variants (dark-field images) in martensitic alloys are observed using TEMs [25][26][27], the observations of magnetic and crystallographic domains in the same area are rare, which may be caused due to the difficulty in observation while using preinstalled optical systems, as explained in the introduction section. We further note that variants are reported to be controlled by magnetic fields, which are the origins of the large magnetoelastic effect [28].…”
Section: Magnetic Domain Observations Using the Constructed Optical Smentioning
confidence: 99%
“…Similarly, the combination of SPM with (scanning) transmission electron microscopy (STEM) offers an obvious advantage for gaining atomic level understanding of dynamic processes ( Figure ) 92, 97–99. While in these studies the primary effort is the STEM component, the SPM studies can: (a) for in situ SPM‐STEM studies provide vital information on optimization the experiment ex‐vacuo and hence greatly improving the throughput, and (b) for device characterization provide (unavailable from STEM) information on local relaxation times, field structures, and other functional parameters.…”
Section: Us Department Of Energy Nanoscale Science Research Centersmentioning
confidence: 99%