2013
DOI: 10.1039/c3ce41038b
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In-situ ion exchange synthesis of hierarchical AgI/BiOI microsphere photocatalyst with enhanced photocatalytic properties

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Cited by 104 publications
(42 citation statements)
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“…To address these limitations, numerous modifications have been made to increase the lifetime of photogenerated charge carriers of BiOI, including self doping [15], morphology modulation [16,17] and coupling with other semiconductors [10]. Among them, as a typical p-type semiconductor, BiOI coupled with other ntype semiconductors with a relatively large band gap to form BiOI-based heterojunction composites, such as BiOI/Zn 2 SnO 4 [18], Bi 2 O 2 CO 3 /BiOI [19], BiOI/Zn 2 GeO 4 [9], BiOI/TiO 2 [20], AgI/BiOI [21], ZnWO 4 /BiOI [22], g-C 3 N 4 /BiOI [23], is proven to be an effective strategy for improving the photocatalytic activity under visible light irradiation, because the formation of interface junction can extend light responsive range, facilitate the interfacial charge transfer and enhance the separation of photoinduced electron-hole pairs [9,22]. Additionally, tungsten oxide (WO 3 ), as an important n-type visible-light photocatalyst with a band gap (2.4-2.8 eV), has received a great deal of attention due to its resilience to photocorrosion effect in aqueous solution and good electron transport properties [24].…”
Section: Introductionmentioning
confidence: 99%
“…To address these limitations, numerous modifications have been made to increase the lifetime of photogenerated charge carriers of BiOI, including self doping [15], morphology modulation [16,17] and coupling with other semiconductors [10]. Among them, as a typical p-type semiconductor, BiOI coupled with other ntype semiconductors with a relatively large band gap to form BiOI-based heterojunction composites, such as BiOI/Zn 2 SnO 4 [18], Bi 2 O 2 CO 3 /BiOI [19], BiOI/Zn 2 GeO 4 [9], BiOI/TiO 2 [20], AgI/BiOI [21], ZnWO 4 /BiOI [22], g-C 3 N 4 /BiOI [23], is proven to be an effective strategy for improving the photocatalytic activity under visible light irradiation, because the formation of interface junction can extend light responsive range, facilitate the interfacial charge transfer and enhance the separation of photoinduced electron-hole pairs [9,22]. Additionally, tungsten oxide (WO 3 ), as an important n-type visible-light photocatalyst with a band gap (2.4-2.8 eV), has received a great deal of attention due to its resilience to photocorrosion effect in aqueous solution and good electron transport properties [24].…”
Section: Introductionmentioning
confidence: 99%
“…Owing to literature, VB and CB potential edges of nano‐WO 3 and nano‐WO 3 ‐SO 3 H are computed (Eqs. , ).ECB=XEe0.5EgEVB=ECB+Eg…”
Section: Resultsmentioning
confidence: 99%
“…Immobilizing the ÀSO 3 H groups on the surface of WO 3 causes a significant drop on band gap energy and occurring redshift. Subsequently, photoactivity of nano-WO 3 -SO 3 H would increase along visible wavelength.Owing to literature, VB and CB potential edges of nano-WO 3 and nano-WO 3 -SO 3 H are computed(34,35) (Eqs. 1, 2).…”
mentioning
confidence: 99%
“…16 Photoluminescence (PL) intensity is capable of revealing the recombination efficiency of photogenerated e À and h + . 33,45,46 As is known, weaker intensity represents lower recombination efficiency of e À and h + . 40,47 Fig.…”
Section: Optical and Electronic Propertiesmentioning
confidence: 96%