In situ incorporation of silicon into a CVD diamond layer deposited under atmospheric conditions

Prieske, M.; Vollertsen, Frank

doi:10.1016/j.diamond.2016.01.021

Cited by 5 publications

(2 citation statements)

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“…Raman scattering spectroscopy has proven to be an effective and powerful technique to characterize diamond and diamond-related materials synthesized under different conditions [1][2][3][4][5][6][7][8][9][10]. The first-order Raman scattering spectrum of diamond is one of the simplest of its kind and consists of a single narrow line at around 1332 cm −1 .…”

Section: Introductionmentioning

confidence: 99%

Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

Surovtsev

Kupriyanov

2017

Crystals

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Abstract:The results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of the nitrogen concentration in diamond leads to the temperature-independent increase of the Raman line width. Analysis of the experimental data allows us to conclude that this broadening should be attributed to the defect-induced shortening of the Raman phonon lifetime. We believe that this mechanism is responsible for the increase of the Raman line width caused by most point-like defects in diamond. No pronounced effects of the nitrogen defects on the Raman line position and phonon anharmonicity are observed.

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Section: Introductionmentioning

confidence: 99%

Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

Surovtsev

Kupriyanov

2017

Crystals

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“…A laser-based plasma (LaPlas) CVD process was used at atmospheric pressure without a vacuum chamber to deposit polycrystalline CVD diamond coatings [7]. The schematic layout of the LaPlas CVD process is shown in Figure 1.…”

Section: Methodsmentioning

confidence: 99%

Interaction of Methane Concentration and Deposition Temperature in Atmospheric Laser Based CVD Diamond Deposition on Hard Metal

2019

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For laser-based plasma chemical vapour deposition (CVD) of diamond on hard metal at atmospheric pressure, without a vacuum chamber, the interaction between the deposition temperature and the methane concentration has to be understood to adjust the coating thickness, deposition duration, and medium diamond crystal size. The hypothesis of this study is that a wider range of methane concentrations could be used to deposit microcrystalline diamond coatings due to the increasing etching and deposition rates with rising deposition temperatures. The deposition of the CVD diamond coatings was carried out on K10 hard metal substrates. The process temperature and the methane concentration were varied from 650 to 1100 °C and from 0.15% to 5.0%, respectively. The coatings were analysed by scanning electron and 3D laser-scanning confocal microscopy, energy dispersive X-ray and micro-Raman spectroscopy, as well as cryofracture-based microscopy analysis. The results showed that microcrystalline diamond coatings could be deposited in a wider range of methane concentrations when increasing the process temperature. The coating thickness saturates depending on the process temperature even though the methane concentration constantly increases. The coating thickness increases with an increasing deposition temperature until the cobalt diffusion hinders the deposition at the process temperature of 1100 °C.

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