2017
DOI: 10.1016/j.jallcom.2017.04.288
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In situ formation and doping of Ag/SnO 2 electrical contact materials

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Cited by 35 publications
(2 citation statements)
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“…Several authors used many dopants such as Ag, Al, Ga, Zn, In, Mn, Sb, and Ru in SnO 2 films to improve these properties [11][12][13][14][15][16][17][18]. Among these dopants, Zr can obtain a high quality of films for optoelectronic device applications [19].…”
Section: Introductionmentioning
confidence: 99%
“…Several authors used many dopants such as Ag, Al, Ga, Zn, In, Mn, Sb, and Ru in SnO 2 films to improve these properties [11][12][13][14][15][16][17][18]. Among these dopants, Zr can obtain a high quality of films for optoelectronic device applications [19].…”
Section: Introductionmentioning
confidence: 99%
“…High contact resistance: Ag-SnO 2 materials exhibit greater contact resistance than Ag-CdO composites [ 11 , 12 ]. This behavior is attributed to the formation of a SnO 2 -rich layer on the contact surface during device operation, due to the greater thermal stability of SnO 2 than that of CdO, and the poor wettability between SnO 2 and molten Ag [ 13 , 14 ].…”
Section: Introductionmentioning
confidence: 99%