In-situ electrical characterization of co-evaporated Zr–Ti, Zr–V and Zr–Co thin getter films during thermal activation

Electrical and ion beam analyses of yttrium and yttrium-titanium getter thin films oxidation

“…Sheet resistance of the films was measured by the 4 point probe method at room temperature. The Temperature Coefficient of Resistance (TCR) was determined by using the method described by S. Lemettre et al 16 .…”

“…A better quantification of the light elements such as oxygen was obtained using Nuclear Reaction Analysis (NRA) performed with a deuteron beam at 900 keV. The oxygen content is measured by the 16 O(d,α0) 14 N nuclear reaction at 166°. Combination of these techniques and their analysis by SIMNRA software 17 with SigmaCalc cross section 18 allows determining the in-depth concentration profiles of oxygen and metals in the films.…”

“…All results in this section show the high affinity of yttrium for oxygen at low temperatures (≤300 °C). 16,25 . The TCR of Y-Ti films are lower than the ones of single metals titanium and yttrium, and the lowest TCR are obtained with compositions close to equal content in Ti and Y, as expected by the absence of definite intermetallic compounds or solid solution in the Y-Ti system 26 .…”

Oxygen and hydrogen sorption in thermally activated yttrium-based getter thin films for MEMS vacuum packaging

“…The films sheet resistance was measured before and after annealing by the 4-point probe method at room temperature. The Temperature Coefficient of Resistance (TCR) was determined by using a method described previously [ [9] Surface microstructure of as-deposited and annealed films was observed by Scanning Electron Microscopy (SEM). The in-plane mean grain size was estimated by using the mean linear intercept method ASTM E112 standard.…”