In situ EELS and TEM observation of silicon carbide irradiated with helium ions at low temperature and successively annealed

Ion-irradiation-induced athermal annealing of helium bubbles in SiC

“…2a shows the TEM image of SiC after 140 keV He ion irradiation and annealing at 1200 K for 30 min. The annealing temperate was selected to be high enough to induce crystallization (>1173 K), but low enough to minimize He release from the surface [16]. In a manner similar to threshold DPA for amorphization, there is a wide range of crystallization temperatures reported in literature, with complexity caused by detailed ion irradiation parameters [5,3,6,7].…”

Radiation defects in nano-structured materials

“…The observation of the defects was carried out by using a transmission electron microscopy (TEM), JEOL JEM2000F, operating at 200 kV. The TEM is equipped with a low energy ion source, which enables us an in situ observation of the radiation effects [4]. Gaseous ions up to 35 kV are available to irradiate onto the TEM specimens at elevated temperatures.…”

A review of transmission electron microscopes with in situ ion irradiation

“…Coupled to a 40 kV Origin Electric Company Ltd. ion accelerator, the ion beam made an angle of 30°w ith the electron beam and could be measured at the sample position using a Faraday cup integrated into a specimen rod. As with the previous JEOL JEM-100C, this instrument was also fitted with EELS [40]. JAERI became a part of the Japan Atomic Energy Agency (JAEA) in 2005.…”

“…This was a 200 kV JEOL JEM-2000FX connected to a 10-400 kV ion source with an angle of 30° [56] between the electron and ion beams. Another facility was constructed at JAERI utilising a 200 kV JEOL JEM-2000F in 1996 [40,69,70]. Coupled to a 40 kV Origin Electric Company Ltd. ion accelerator, the ion beam made an angle of 30°w ith the electron beam and could be measured at the sample position using a Faraday cup integrated into a specimen rod.…”

“…These include electron energy loss spectroscopy (EELS), energy dispersive X-ray spectroscopy (EDS) and scanning TEM (STEM) on various instruments at both the Japan Atomic Energy Research Institute (JAERI) [37][38][39][40][41][42][43], the National Research Institute for Metals (NRIM) [28,35,44,45] and at JANNuS [7,21,36] (the EELS at NRIM and JANNuS being a Gatan image filter (GIF)). Capabilities for scanning electron microscopy (SEM) in the TEM have also been implemented at JAERI, NIMS and the University of Tokyo [11,35,39,44].…”