A review of transmission electron microscopes with in situ ion irradiation

Hinks, John

doi:10.1016/j.nimb.2009.09.014

Cited by 76 publications

(30 citation statements)

References 59 publications

(114 reference statements)

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“…Since the publication of the last comprehensive review of such facilities in 2009 [16], two new facilities have been established at the Ion Beam Laboratory at Sandia National Laboratories (USA) [19] and at the Centre de Recherche Public Gabriel Lippmann (Luxembourg). Another unique facility has recently been established at the Centre de Recherche Public Gabriel Lippmann (Luxembourg) and consists of an FEI Tecnai F20 fitted with a 35 kV gallium FIB [35].…”

Section: Facilities Around the Worldmentioning

confidence: 99%

“…In the 1980s and 1990s, there followed several facilities such as: the High Voltage Electron Microscope (HVEM) [12], [13] and Intermediate Voltage Electron Microscope (IVEM) [14] both at Argonne National Laboratory (USA); the JEOL JEM-ARM1000 at the National Institute for Materials Science (NIMS) [15] and JEOL JEM-ARM1300 at Hokkaido University [16] (both Japan); and more recently, the Joint Accelerators for Nano-science and Nuclear Simulation (JANNuS) facility at CSNSM Orsay (France) [17], the Microscope and Ion Accelerator for Materials Investigations (MIAMI) facility at the University of Huddersfield (UK) [18] and the I 3 TEM facility at the Ion Beam Laboratory at Sandia National Laboratories (USA) [19]. The interested reader is directed to previous reviews on the technique of TEM with in situ ion irradiation [16], [20]- [26].…”

Section: Introductionmentioning

confidence: 99%

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Transmission electron microscopy with in situ ion irradiation

Hinks

2015

J. Mater. Res.

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The macroscopic properties of materials exposed to irradiation are determined by radiation damage effects which occur on the nanoscale. These phenomena are complex dynamic processes in which many competing mechanisms contribute to the evolution of the microstructure and thus to its end-state. In order to explore and understand the behaviour of existing materials and to develop new technologies, it is highly advantageous to be able to observe the microstructural effects of irradiation as they occur.Transmission electron microscopy with in situ ion irradiation is ideally suited to this kind of study. This review focuses on some of the important factors in designing this type of experiment including sample preparation and ion beam selection. Also presented are a brief history of the development of this technique and an overview of the instruments in operation today including the latest additions.

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Section: Facilities Around the Worldmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Transmission electron microscopy with in situ ion irradiation

Hinks

2015

J. Mater. Res.

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“…Due to the space constrictions of the port diameter ͑20 mm͒ and the electric field strength required to deflect ions which have been accelerated across 100 kV, the minimum angle achievable between the ion and electron beams is 25°-this compares well with other instruments being bettered by only 4 out of 28 of the other TEMs interfaced to ion beam systems which have been constructed around the world. 5 An aperture is placed at the exit from the final deflection system to shield the electron beam of the TEM from the electric field and insulating surfaces. In order to test for interference with the imaging capabilities of the TEM caused by the electrostatic field, lattice images have been observed while the voltage applied to the deflection plates has been increased from zero to its maximum value: no degradation of the image was observed.…”

Section: Final Deflectionmentioning

confidence: 99%

MIAMI: Microscope and ion accelerator for materials investigations

Hinks

Berg

Donnelly

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A transmission electron microscope (TEM) with in situ ion irradiation has been built at the University of Salford, U.K. The system consists of a Colutron G-2 ion source connected to a JEOL JEM-2000FX TEM via an in-house designed and constructed ion beam transport system. The ion source can deliver ion energies from 0.5 to 10 keV for singly charged ions and can be floated up to 100 kV to allow acceleration to higher energies. Ion species from H to Xe can be produced for the full range of energies allowing the investigation of implantation with light ions such as helium as well as the effects of displacing irradiation with heavy inert or self-ions. The ability to implant light ions at energies low enough such that they come to rest within the thickness of a TEM sample and to also irradiate with heavier species at energies sufficient to cause large numbers of atomic displacements makes this facility ideally suited to the study of materials for use in nuclear environments. TEM allows the internal microstructure of a sample to be imaged at the nanoscale. By irradiating in situ it is possible to observe the dynamic evolution of radiation damage which can occur during irradiation as a result of competing processes within the system being studied. Furthermore, experimental variables such as temperature can be controlled and maintained throughout both irradiation and observation. This combination of capabilities enables an understanding of the underlying atomistic processes to be gained and thus gives invaluable insights into the fundamental physics governing the response of materials to irradiation. Details of the design and specifications of the MIAMI facility are given along with examples of initial experimental results in silicon and silicon carbide.

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“…More relevant to the present study, loop growth rate is decreased significantly due to the presence of Sn, attributed to the change of the point defect mobility and to enhanced vacancy-interstitial recombination by Hinks [22]. Indeed, it has been reported that Sn is a very important element in zirconium, affecting radiation damage significantly: Hood suggests that Sn at low concentrations (0.l-0.2%) has little influence, whereas the high-Sn (1.5%) alloys show the strong effects of Sn on radiation damage by increasing vacancy trapping and recombination possibilities [37].…”

Section: Influence Of Alloy Elementsmentioning

confidence: 64%

“…Ion irradiation can produce a high PKA energy for the study of prismatic loop formation at low doses, similar to the doses at which prismatic loops are seen during neutron irradiation, for comparison with the results of MD simulations. In addition, in situ ion irradiation within TEM coupled with a high energy irradiation facility such as a tandem accelerator allows direct observation of internal microstructure of materials while being irradiated [22].…”

Section: Introductionmentioning

confidence: 99%