In-situ doping of erbium in hydrogenated amorphous carbon by low temperature metalorganic radio frequency plasma enhanced chemical vapor deposition

Hsu, Hui-Lin; Leong, Keith; Halamicek, Michael; Teng, I-Ju; Mahtani, Pratish; Juang, Jenh‐Yih; Li, Qian; Kherani, Nazir P.

doi:10.1016/j.tsf.2014.02.038

Cited by 4 publications

(3 citation statements)

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“…The technique has been demonstrated to provide the capability of doping Er in a vertically uniform profile. As well, this technique provides independent control of the Er concentration profile and the optical properties of the host material [ 44 , 64 ].…”

Section: Methodsmentioning

confidence: 99%

“…Accordingly, it was presumed that the optically active Yb 3+ ions can be preserved under appropriate deposition conditions in the present study. In addition, it has been previously demonstrated that the Er 3+ optical activity can be partially preserved without the need of a post-deposition annealing step by utilizing the Er(fod) 3 compound in the RF-PEMOCVD method [ 44 , 64 ]. The hydrocarbon ligands of the Yb metal-organic compound are expected to promote a high Yb concentration in the a-C host matrix as its structure matches the internal structure of the a-C host matrix.…”

Section: Methodsmentioning

confidence: 99%

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Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

et al. 2014

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Abstract:In situ Yb-doped amorphous carbon thin films were grown on Si substrates at low temperatures (<200 °C) by a simple one-step RF-PEMOCVD system as a potential photonic material for direct integration with Si CMOS back end-of-line processing. Room temperature photoluminescence around 1 µm was observed via direct incorporation of optically active Yb 3+ ions from the selected Yb(fod) 3 metal-organic compound. The partially fluorinated Yb(fod) 3 compound assists the suppression of photoluminescence quenching by substitution of C-H with C-F bonds. A four-fold enhancement of Yb photoluminescence was demonstrated via deuteration of the a-C host. The substrate temperature greatly influences the relative deposition rate of the plasma dissociated metal-organic species, and hence the concentration of the various elements. Yb and F incorporation are promoted at lower substrate temperatures, and suppressed at higher substrate temperatures. O concentration is slightly elevated at higher substrate temperatures. OPEN ACCESSMaterials 2014, 7 5644Photoluminescence was limited by the concentration of Yb within the film, the concentration of Yb ions in the +3 state, and the relative amount of quenching due to the various de-excitation pathways associated with the vibrational modes of the host a-C network. The observed wide full-width-at-half-maximum photoluminescence signal is a result of the variety of local bonding environments due to the a-C matrix, and the bonding of the Yb 3+ ions to O and/or F ions as observed in the X-ray photoelectron spectroscopy analyses.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

et al. 2014

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“…Primarily the groups of Y.M. Foong, et al and Hui-Lin Hsu, et al have studied Er (+III) luminescence properties in hydrogenated diamond-like carbon (DLC) films that were doped by erbium ions during the film growth [ 42 , 43 , 44 , 45 ]. Erbium concentration in these films was higher than in our case, i.e., of about 3.9 at.…”

Section: Discussionmentioning

confidence: 99%

Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing

et al. 2018

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We present a fundamental study of the erbium luminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at fluences up to 5 × 1015 ions·cm−2, followed by annealing at controllable temperature in Ar atmosphere or vacuum to enhance the near infrared photoluminescence. The Rutherford Backscattering Spectrometry showed that Er concentration maximum determined for NCD films is slightly shifted to the depth with respect to the Stopping and Range of Ions in Matter simulation. The number of the displaced atoms per depth slightly increased with the fluence, but in fact the maximum reached the fully disordered target even in the lowest ion fluence used. The post-implantation annealing at 800 °C in vacuum had a further beneficial effect on erbium luminescence intensity at around 1.5 μm, especially for the Er-doped NCD films, which contain a higher amount of grain boundaries than single-crystalline diamond.

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Co‐implantation of Er and Yb ions into single‐crystalline and nano‐crystalline diamond

Cajzl

Akhetova

Nekvindová

et al. 2018

Surface & Interface Analysis

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The paper reports on the results of Er‐Yb and Er‐Al co‐implantation into commercial single‐crystalline diamonds as well as into nano‐crystalline diamond (NCD) thin films and their photoluminescence properties. The NCD thin films were deposited on fused silica glass by linear‐antenna microwave plasma‐enhanced chemical vapour deposition (PE MWCVD). Er implantation was performed at an energy of 190 keV and fluences of 1 × 1015 and 5 × 1015 ions.cm−2 followed by Yb co‐implantation under the same conditions or Al co‐implantation at an energy of 40 keV and the same fluences. The concentration depth profiles of the elements and the degree of their crystal damage (structural ordering) were measured using Rutherford backscattering spectroscopy and Rutherford backscattering spectroscopy/channelling, respectively. Structural changes were studied by Raman spectroscopy. All Er‐Yb doped samples revealed measurable photoluminescence at approximately 1.5 μm. A comparison with Er‐implanted samples showed that the Er‐Yb co‐implantation was beneficial for the photoluminescence at 1.5 μm in both substrates. Er‐doped NCD films revealed higher intensity of luminescence than Er‐doped single‐crystal diamond. This observation is attributed to the specific incorporation of Er into the diamond and at the grain boundaries.

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In-situ doping of erbium in hydrogenated amorphous carbon by low temperature metalorganic radio frequency plasma enhanced chemical vapor deposition

Cited by 4 publications

References 31 publications

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing

Co‐implantation of Er and Yb ions into single‐crystalline and nano‐crystalline diamond

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