In situ doping control for growth of n–p–n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

ADSORPTION AND DISSOCIATION OF PH3 ON SiGe(100) (2 × 1) SURFACE

“…[1][2][3][4] SiGe alloys are also in sphere of interest as a new future material for multijunction a-Si based solar cells. 5,6 In the literature, SiGe is generally grown on Si substrate epitaxially using either gas source molecular beam epitaxy (GS-MBE), 2,7-9 reduced pressure chemical vapor deposition (RP-CVD), [10][11][12][13][14][15] or ultra high vacuum chemical vapor deposition (UHV-CVD).…”

“…2,12,16,17 Because, these techniques have flexibity with respect to controlling growth parameters in research of SiGebased high-performance devices. [1][2][3][4][5][6] In most of the works, 3,6,7,10,11,13-16 the phosphine (PH 3 ) has been reported to be prerequisite doping gas source to provide high-quality n-region with steep and narrow doping profile in high-performance SiGe HBTs and MOSFETs. Since the cracking temperature of PH 3 gas is about 300 • C, 3 the P doping of SiGe is being at atomic level at very low temperatures, not higher than 550 • C. 10,14 The stages in the doping process of SiGe by phosphine can be ordered as PH 3 adsorption and PH 3 decomposition on the surface, P desorption and P incorporation from the surface to the grown SiGe film.…”

DISSOCIATION OF PH3 AND AsH3 ON Ge(100)(2x1) SURFACE

“…1-3 PH 3 and AsH 3 gases are also commonly used in situ n-type dopant source in chemical vapor deposition (CVD) or gas source molecular beam epitaxy (GSMBE) for the epitaxial growth of SiGe high-speed heterojunction bipolar transistors and metal oxide semiconductor field effect transistors. [4][5][6][7] To better understand the nucleation of GaP and GaAs on Ge and control the impurity (P or As) distribution very precisely in Ge or SiGe, it is essential to investigate the details of the interaction of PH 3 and AsH 3 on the Ge surface.…”