In situ differential reflectance spectroscopy study of early stages of .BETA.-FeSi2 silicide formation

e-J. Surf. Sci. Nanotechnol.

Галкин

Koval³

et al. 2006

Self Cite

The results of investigations devoted to a search of conditions of the simultaneous metal and semiconductor silicides formation being important problem for microelectronics are presented in the paper. The Si(111)-Fe and Si(111)-Cr systems having been chosen due to low lattice misfit of silicides observed in they were studied by the methods of Differential Reflection Spectroscopy (DRS) and Atomic Force Microscopy (AFM). The new method (Restored Standard method) having been invented for DRS studying of solid phase epitaxy (SPE) in these systems is first noted. The detailed description of processes occurred in the investigated systems and optimal conditions for the simultaneous metal and semiconductor silicides formation are presented in paper.

Section: A Spe Of Iron On Si(111)mentioning

confidence: 61%

Section: A Spe Of Iron On Si(111)mentioning

confidence: 67%

Section: A Spe Of Iron On Si(111)mentioning

confidence: 67%

“…Both described MDS and MOS are used to treat DRS data obtained during RDE [2,3] or MBE [8,9]. They can be used for initial stage of SPE (RT deposition, Fig.…”

Section: The Methods Of the Restored Standardmentioning

confidence: 99%

“…Other iron silicides are metals and can be used as contact platform. In the previous work [2] we studied iron silicides formation during reactive deposition epitaxy (RDE) at 475…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

In situ differential reflectance spectroscopy study of solid phase epitaxy in Si(111)-Fe and Si(111)-Cr systems

e-J. Surf. Sci. Nanotechnol.

Галкин

Koval³

et al. 2006

Self Cite

Growth, structure, optical and electrical properties of Si/2D Mg₂Si/Si(111) double heterostructures and Schottky diodes on their base

Galkin

Dózsa

et al. 2013

Phys. Status Solidi C

Mg2Si layers were grown on silicon by RDE at 150 °C and by SPE at 160 °C, and they were covered by silicon cap grown by MBE at 150‐180 °C. The silicide layers and the silicon cap were investigated by in situ and ex situ methods. The 2D Mg2Si layer continuity and electrical properties were conserved during cap growth. The point defects in the structure are dominated by contamination of the substrate and by diffusion of the not reacted Mg into silicon. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Brief observe on iron silicide growth on amorphous silicon

Gouralnik

Lin

et al. 2013

Phys. Status Solidi C