In situ bulk lifetime measurement on silicon with a chemically passivated surface

Horányi, T.S.; Pavelka, T.; Tüttö, P.

doi:10.1016/b978-0-444-89908-8.50064-7

Cited by 112 publications

(16 citation statements)

References 5 publications

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“…Before measuring the lifetime using the QSSPC technique, the as-grown samples were subjected to a polishing etch containing HNO 3 , HF and CH 3 COOH (removal of 20 mm from each side of the wafer) and a subsequent surface clean by Piranha solution (H 2 O 2 :H 2 SO 4 ¼1:4) followed by an HF-Dip. The surface was passivated using an iodine/ethanol solution [13]. Electron back scattered diffraction (EBSD) and transmission electron microscope (TEM) were used to study the grain-structure, -orientation, and -morphology as well as structural defects.…”

Section: Methodsmentioning

confidence: 99%

Oxygen distribution on a multicrystalline silicon ingot grown from upgraded metallurgical silicon

Sabatino

Binetti

Libal

et al. 2011

Solar Energy Materials and Solar Cells

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Section: Methodsmentioning

confidence: 99%

Oxygen distribution on a multicrystalline silicon ingot grown from upgraded metallurgical silicon

Sabatino

Binetti

Libal

et al. 2011

Solar Energy Materials and Solar Cells

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“…It is experimentally very difficult to uniquely separate the contribution of the silicon ILD lifetime from the contribution of the rest of the cell to the cell performance. In this work, QSSPC ILD lifetime data are measured on both (i) the ingot from which wafers were sawn and processed into PERC cells and (ii) the actual wafer after acid stripping the cell and passivating with iodine . There are numerous issues with both approaches.…”

Section: Boundary + Injection‐level‐dependent Lifetime Model Applied mentioning

confidence: 99%

Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell

Hieslmair

Appel

Kasthuri

et al. 2016

Progress in Photovoltaics

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The injection‐level‐dependent (ILD) lifetime of the silicon wafer impacts many characteristics of the final photovoltaic cell. While efficiency is commonly understood to be impacted by the silicon bulk lifetime (at the maximum power point injection level), this work demonstrates the wide ranging impacts of ILD lifetime on the Voc, the fill factor (FF), the diode ideality factor m, and the dim light response. Instead of a two‐diode model, we utilize a boundary + ILD bulk lifetime model to analyze a commercial passivated emitter rear contact (PERC) cell featuring an AlOx dielectric rear passivation. The ILD lifetime is directly measured and used to calculate the bulk recombination current across injection levels. With this boundary + ILD lifetime model, we demonstrate the role of the ILD lifetime on many cell parameters in this PERC cell. For most high efficiency commercial p‐type monocrystalline solar cells, the typically lower bulk lifetime at the maximum power point versus the lifetime at the open circuit point reduces the measured FF and pseudo‐FF. This work illustrates that for a commercial PERC cell with AlOx rear passivation, the ILD lifetime is the primary mechanism behind reduced FF, ideality factors greater than 1, and the source of the J02 term in the two‐diode model. The crucial implications of this work are not only to better understand commercial PERC cell loss mechanisms but also to encourage a focus on different metrics in cell diagnostics. One such metric is the Voc at 0.1 or 0.05 suns. Copyright © 2016 John Wiley & Sons, Ltd.

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“…The wet process has been improved in terms of lifetime measurement by changing the cleaning conditions with an iodine-ethanol passivation technique. 14 Controlling the interface properties during a-Si deposition is also important. Even if we used the same quality a-Si layers, we would have obtained different cell properties due to plasma damage during the deposition.…”

Section: Reduction Of Interface State Densitymentioning

confidence: 99%

Obtaining a higherVoc in HIT cells

Taguchi

Terakawa

Maruyama

et al. 2005

Prog. Photovolt: Res. Appl.

269

147

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We have achieved a very high conversion efficiency of 21Á5% in HIT cells with a size of 100Á3 cm 2 . One of the most striking features of the HIT cell is its high opencircuit voltage V oc , in excess of 710 mV. This is due to the excellent surface passivation at the a-Si/c-Si heterointerface realized by Sanyo's successful technologies for fabricating high-quality a-Si films and solar cells with low plasma damage processes. We have studied ways to treat the surface to produce a good interface throughout our fabrication processes. We have also investigated the deposition conditions of a-Si layers for optimizing the barrier height for the minority carriers in the heterojunction. Our approach for obtaining HIT cells with a high V oc is reviewed here.

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In situ bulk lifetime measurement on silicon with a chemically passivated surface

Cited by 112 publications

References 5 publications

Oxygen distribution on a multicrystalline silicon ingot grown from upgraded metallurgical silicon

Oxygen distribution on a multicrystalline silicon ingot grown from upgraded metallurgical silicon

Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell

Obtaining a higherVoc in HIT cells

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In situ bulk lifetime measurement on silicon with a chemically passivated surface

Cited by 112 publications

References 5 publications

Oxygen distribution on a multicrystalline silicon ingot grown from upgraded metallurgical silicon

Oxygen distribution on a multicrystalline silicon ingot grown from upgraded metallurgical silicon

Impact of the injection‐level‐dependent lifetime on Voc, FF, ideality m, J02, and the dim light response in a commercial PERC cell

Obtaining a higherVoc in HIT cells

Contact Info

Product

Resources

About

Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell