Abstract:The development of new materials for the electronics industry has been in focus in recent years, as circuit miniaturization poses challenges for conventional solutions. Dewetting of Cu films over diffusion-barrier layers has fostered an interest in developing new solutions with lower interfacial energies, to withstand processing and service life. Co-W is a candidate material for seedless Cu-interconnect deposition, but its behavior during annealing is still not properly addressed. This study used an in situ sc… Show more
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