In-Plane Optical Anisotropy of a -Plane GaN Film on r -Plane Sapphire Grown by Metal Organic Chemical vapour Deposition

Abstract

The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence (PL), optical transmission and Raman scattering measurements. Through polarised PL and transmission spectra, the in-plane optical anisotropic properties of a-plane GaN film are found, which are attributed to the topmost valance band (at Γ point) split into three sub-bands under anisotropic strain. The PL spectra also exhibit that the light hole band moves up more rapidly than the spin-orbit crystal-field spilt-off hole band with the increasing in-plane anisotropic compressive strain. Raman scattering spectra under different configurations further indicate the in-plane anisotropy and the hexagonal crystalline structure of these a-plane GaN films.