Optical polarization characteristics of <i>c</i>-plane InGaN/GaN asymmetric nanostructures

Zhuang, Zhe; Li, Yang; Liu, Bin; Guo, Xu; Dai, Jiangping; Zhang, Guogang; Tao, Tao; Zhi, Ting; Xie, Zili; Ge, Haixiong; Shi, Yi; Zheng, Youdou; Zhang, Rong

doi:10.1063/1.4938119

Cited by 16 publications

(19 citation statements)

References 39 publications

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“…2(d). In contrast, the relative EQE of the c-plane micro-LEDs decreased down to 16%, which might be mainly attributed to polarization induced QCSE, current overflow, and low injection efficiency [21], [22]. Clearly, the semi-polar micro-LEDs with less efficiency droop in comparison with that of c-plane micro-LEDs further demonstrate the benefits from reduced QCSE by applying semi-polar structure.…”

Section: Resultsmentioning

confidence: 99%

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Zheng

Zhang

et al. 2020

IEEE Photonics J.

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Semi-polar micro-LEDs have gain increasing interests due to the advantages of polarization control and quantum efficiency improvement. In this work, a novel semi-polar (20-21)-plane micro-LEDs array has been designed and manufactured. In comparison with c-plane micro-LEDs, semi-polar micro-LEDs indicate better electrical and optical performance. The relative EQE of semi-polar micro-LEDs remains at 62% under the injected current density of 775.6 A/cm 2 , which indicates a reduced efficiency droop due to less polarization in MQWs. It has been further proved by a significant reduction of 55% in emission peak blue-shift under the injected current density from 11.1 A/cm 2 to 775.6 A/cm 2. In addition, the carrier recombination dynamics and spatial light distribution of semi-polar micro-LEDs with different pixel sizes have been studied. Fast recombination lifetime in smaller size semi-polar micro-LEDs indicates a promising way to be used as a high modulation bandwidth light source. Stable and uniform light distribution in a wider range of spatial azimuths further supports for the semi-polar micro-LEDs as a strong candidate for the applications of high-resolution display and high-speed visible light communication.

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Section: Resultsmentioning

confidence: 99%

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Zheng

Zhang

et al. 2020

IEEE Photonics J.

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“…A soft UV-curing NIL and a post-growth etching approach have been employed to obtain the AlGaN NR arrays [26–28]. As shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

Dai

Gao

et al. 2019

Nanoscale Res Lett

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Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by scanning electron microscopy and transmission electron microscopy. Compared with planar samples, cathodoluminescence measurement revealed that NR samples showed 1.92-fold light extraction efficiency (LEE) enhancement and a 12.2-fold internal quantum efficiency (IQE) enhancement for the emission from multi-quantum wells at approximately 277 nm. The LEE enhancement can be attributed to the well-fabricated nanostructured interface between the air and the epilayers. Moreover, the reduced quantum-confined stark effect accounted for the great enhancement in IQE.

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“…However, the c‐plane LED structures exhibit no polarized light emission due to the isotropic in‐plane symmetry and resultant isotropic in‐plane strain . Accordingly, only a few researches on theoretical calculations for polarized emission behaviors from the c‐plane InGaN/GaN MQWs have been reported . Recently, we reported the anisotropic in‐plane strain states of −1.178% and −1.921% along two perpendicular directions and resultant polarized photoluminescence (PL) from c‐plane InGaN/GaN MQWs grown on stripe‐shaped cavity‐engineered sapphire substrate (SCES) at room temperature .…”

Section: Introductionmentioning

confidence: 99%

Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate

Kim

Park

Ahn

et al. 2019

Physica Status Solidi (b)

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Temperature‐dependent polarized photoluminescence from anisotropically strained c‐plane InGaN/GaN multiple quantum wells on stripe‐shaped cavity‐engineered sapphire substrate is theoretically and experimentally investigated. Polarization ratios decrease from 0.98 to 0.74, and emission peak shifts increase from 0 to 50.9 meV with increasing temperature from 10 to 300 K, respectively. Theoretical calculations based on k·p perturbation theory reveal that the temperature dependence of polarized optical behaviors is attributed to the modified valence band structures and hole distributions in each subband. Theoretical results are in good agreement with the experimental results over temperature range from 10 to 300 K, providing in‐depth understanding for the strain‐induced valence band modification of III‐nitride semiconductors.

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Optical polarization characteristics of c-plane InGaN/GaN asymmetric nanostructures

Cited by 16 publications

References 39 publications

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate

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