2010
DOI: 10.1088/0957-4484/21/16/165504
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In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

Abstract: We report an actuation/detection scheme with a top-down nanoelectromechanical system (NEMS) for frequency shift based sensing applications with outstanding performance. It relies on electrostatic actuation and piezoresistive nanowire gauges for in-plane motion transduction. The process fabrication is fully CMOS (complementary metal-oxide-semiconductor) compatible. The results show a very large dynamic range of more than 100 dB and an unprecedented signal to background ratio of 69 dB providing an improvement of… Show more

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Cited by 121 publications
(96 citation statements)
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“…Moreover, extrapolation of Eq. (2) shows that the nano-Pirani may also work for pressure above the atmospheric pressure although no results in this range are presented here and the hysteresis has not been studied either.…”
mentioning
confidence: 87%
“…Moreover, extrapolation of Eq. (2) shows that the nano-Pirani may also work for pressure above the atmospheric pressure although no results in this range are presented here and the hysteresis has not been studied either.…”
mentioning
confidence: 87%
“…It consists of a single nanobeam with an annular cross section initially straight and clamped at its two ends. It is actuated by two symmetric electrodes providing an electrostatic force v(t) = V dc +V ac cos(Ωt), where V dc is the dc polarization voltage, V ac is the amplitude of the applied ac voltage,t is the time andΩ is the excitation frequency.The two electrodes are positioned at a distance d 1 from the fixed end in order to place a piezoelectric or piezoresistive transduction [11] and at a distance d 2 from the free extremity.…”
Section: Design and Modelmentioning
confidence: 99%
“…By evaluating the frequency shift, the mass of the added species can be estimated. Driven below its critical amplitude, This device has shown promising performances in terms of frequency stability, dynamic range, and achievable mass resolution of few zeptograms [15]. Unlike the stand-alone NEMS described in [16], it uses CMOS based fabrication and is therefore fully compatible with very large scale integration (VLSI) of NEMS.…”
Section: Device Descriptionmentioning
confidence: 99%