In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Held, R.; Vancura, T.; Heinzel, T.; Ensslin, Klaus; Holland, M.; Wegscheider, Werner

doi:10.1063/1.121774

Cited by 159 publications

(100 citation statements)

References 22 publications

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“…[7][8][9][10][11][12][13][14] Recently this field has experienced a renovated interest. For one side, several results have contributed to an increased understanding of the oxidation mechanism in silicon surfaces 15,16 and its kinetics.…”

Section: Introductionmentioning

confidence: 99%

Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges

García¹,

Calleja²,

Rohrer³

1999

Journal of Applied Physics

201

156

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Nanometer-size water bridges have been used to confine the oxidation of silicon surfaces with a noncontact atomic force microscope. The formation of a water bridge between two surfaces separated by a gap of a few nanometers is driven by the application of an electrical field. Once a liquid bridge is formed, its length and neck diameter can be modified by changing the tip-sample separation. The liquid bridge provides the ionic species and the spatial confinement to pattern Si͑100͒ surfaces in noncontact force microscopy. The method is applied to write arrays of several thousands dots with a periodicity of 40 nm and an average width of 10 nm.

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Section: Introductionmentioning

confidence: 99%

Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges

García¹,

Calleja²,

Rohrer³

1999

Journal of Applied Physics

201

156

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“…9 We found that the unpassivated surface is rapidly etched away at the required biases due to local anodic oxidation ͑LAO͒. 10 Apart from giving rise to a highly unstable tunneling current, the LAO process also etches away the active layers within minutes when the scan mode is disabled. It is worthwhile to point out that we succeeded in observing an STL signal without passivating the surface by removing the native oxide with ammonia and immediately placing the sample in the STL setup.…”

mentioning

confidence: 99%

Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

Kemerink

Gerritsen

Koenraad

et al. 1999

Applied Physics Letters

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Spectrally resolved scanning tunneling microscope-induced luminescence has been obtained under ambient conditions, i.e., at room temperature, in air, by passivating the sample surface with sulfur. This passivation turned out to be essential to suppress the local anodic oxidation induced by the tunneling current. From the dependence of the luminescence signal on tunneling current and voltage, we find that the passivation solution and post-passivation annealing temperature strongly modify the surface density of states (SDOS). More specifically, we found evidence that, after annealing at 400 °C, no SDOS is left above the bottom of the conduction band. For annealing at 200 °C, the SDOS is found to be extended up to 1.0±0.2 eV above the bottom of the conduction band. In all cases, the passivated (001) surface appears to be completely pinned.

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“…1 Recently, a new technology has been developed: the atomic force microscope ͑AFM͒ mediated direct oxidation of semiconductor surfaces. 2 By this method, the surface of shallow Ga͓Al͔As heterostructures has been patterned; in particular, antidot lattices have been produced with periods down to 250 nm. Direct local anodic oxidation of high-mobility transistors has been shown to provide an effective in situ control of patterning semiconductor nanostructures.…”

mentioning

confidence: 99%

Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

et al. 2000

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Fomin, V., Gladilin, V. N., Klimin, S. N., Devreese, J. T., Koenraad, P. M., & Wolter, J. H. (2000). Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots. Physical Review B, 61(4), R2436-R2439. DOI: 10.1103/PhysRevB.61.R2436 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ͑''quantum bricks''͒ embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes. First, the efficiency of the electron-phonon interaction in an individual quantum dot is enhanced in small dots. Second, we find that the ratio between intensities of the zero-phonon line and one-phonon line in the photoluminescence spectrum is efficiently controlled both by the shape and the size distribution of those quantum dots.Advances in the synthesis of semiconductor nanocrystals have stimulated interest in novel fabrication methods which can provide quantum dots of different geometry, like E-beam lithography which allows the production of optically active nanostructures down to 100 nm. 1 Recently, a new technology has been developed: the atomic force microscope ͑AFM͒ mediated direct oxidation of semiconductor surfaces. 2 By this method, the surface of shallow Ga͓Al͔As heterostructures has been patterned; in particular, antidot lattices have been produced with periods down to 250 nm. Direct lo...

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In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Cited by 159 publications

References 22 publications

Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges

Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges

Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

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