In-plane dielectric properties of epitaxial Ba0.7Sr0.3TiO3 thin films grown on GaAs for tunable device application

Abstract

Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition Appl. Phys. Lett. 101, 191605 (2012) Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure Appl. Phys. Lett. 101, 012907 (2012) We have epitaxially deposited ferroelectric Ba 0.7 Sr 0.3 TiO 3 (BST) thin films grown on GaAs substrate via SrTiO 3 buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from À190 to 90 C, indicating Curie temperature of the BST film to be around 52 C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is found to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application. V C 2012 American Institute of Physics. [http://dx

Progress in pulsed laser deposited two-dimensional layered materials for device applications

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A review of molecular beam epitaxy of ferroelectric BaTiO3films on Si, Ge and GaAs substrates and their applications

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Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

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