2017
DOI: 10.1126/sciadv.aao4044
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In operando x-ray imaging of nanoscale devices: Composition, valence, and internal electrical fields

Abstract: Unrivaled XANES imaging resolution of <100 nm, XANES and XBIC conclusively identify the active area of a nanowire device.

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Cited by 42 publications
(36 citation statements)
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“…Modern X-ray optics allow focusing below 100 nm, with recent demonstrations showing sub-10 nm focusing (Mimura et al, 2010;Dö ring et al, 2013). In the X-ray beam induced current (XBIC) technique, a photocurrent is generated by X-rays (Vyvenko et al, 2004;Villanova et al, 2012;Wallentin et al, 2014;Stuckelberger et al, 2015;Johannes et al, 2017). Spectrally resolved excitation with a tuneable X-ray energy has been used to excite specific elements (Johannes et al, 2017;Chayanun et al, 2018).…”
Section: Introductionmentioning
confidence: 99%
“…Modern X-ray optics allow focusing below 100 nm, with recent demonstrations showing sub-10 nm focusing (Mimura et al, 2010;Dö ring et al, 2013). In the X-ray beam induced current (XBIC) technique, a photocurrent is generated by X-rays (Vyvenko et al, 2004;Villanova et al, 2012;Wallentin et al, 2014;Stuckelberger et al, 2015;Johannes et al, 2017). Spectrally resolved excitation with a tuneable X-ray energy has been used to excite specific elements (Johannes et al, 2017;Chayanun et al, 2018).…”
Section: Introductionmentioning
confidence: 99%
“…During XBIC measurements of solar cells or other devices under test (DUT) 24,25 , the incident X-ray photons set off particle showers consisting of electrons and photons, resulting in a multitude of excited electron-hole pairs per incident X-ray photon in the semiconducting absorber material. Finally, the electron-hole pairs thermalize to the band edges of the solar cell absorber.…”
mentioning
confidence: 99%
“…[16] Die Ga-K-Kanten-XANES-Spektren (Abbildung 3d)z eigten die Oxidation von metallischem Ga zu Ga 2 O 3 . [17] Das Mn-2p-und Mn-3p-XPS-Spektrum wich nach der OER kaum von dem ursprünglich hergestellten MnGa 4 ab,w as auf einen Oxidationszustand von Mn IV an der Oberfläche hindeutet (Abbildung 3b;A bbildungen S42 und S43). [18,19] [26] Daher wird erwartet, dass a-Mn 3 O 4 unter OER-Bedingungen zuerst gebildet und dann über den b-MnOOH-Zwischenschritt langsam in thermodynamisch stabiles d-MnO 2 umgewandelt wird (Schema S1).…”
Section: Angewandte Chemieunclassified