In-line monitoring of advanced microelectronic processes using combined X-ray techniques

Wyon, C.; Delille, D.; Gonchond, J. P.; Heider, Franz; Kwakman, L.F.Tz.; Marthon, S.; Mazor, I.; Michallet, A.; Muyard, D.; Perino-Gallice, L.; Royer, Jean‐Claude; Tokar, A.

doi:10.1016/j.tsf.2003.10.159

Cited by 22 publications

(18 citation statements)

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“…XRR is generally used during the process development on monitor wafers, while XRF is used on product wafers for process control, due to its small spot size (18 μm FWHM for Cu), which complies with metrology box dimensions (70 × 70 μm 2 ). The potential of the combined use of XRR and XRF to monitor Cu interconnect related processes has already been shown in previous papers [50,51].…”

Section: X-ray Metrology Of Cu Interconnectsmentioning

confidence: 77%

X-ray metrology for advanced microelectronics

Wyon

2010

Eur. Phys. J. Appl. Phys.

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Abstract. The recent development of bright X-ray sources, reliable X-ray focusing optics, large X-ray detectors and X-ray data modelling and processing, have improved X-ray techniques to the point where many are being introduced in MOS transistor manufacturing lines as new metrology methods. The fundamental X-ray physical properties, such as their small wavelength and their weak interaction with solid-state matter satisfy basic in-line metrology requirements: non-destructiveness, speed, accuracy, reliability and long-term stability. The capability of X-ray based metrology methods to monitor critical 65 and 45 nm processes such as ion implant, nitrided SiO2 gate dielectrics, NiSi, Cu/porous low-κ interconnects and MIM capacitors is highlighted in this paper.

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Section: X-ray Metrology Of Cu Interconnectsmentioning

confidence: 77%

X-ray metrology for advanced microelectronics

Wyon

2010

Eur. Phys. J. Appl. Phys.

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“…The intensities of the peaks are related to the concentration of these elements in the region excited by the X‐ray beam. Small spot XRF (µ‐XRF) metrology techniques, exhibiting spot sizes in the 20–40 µm range, are now available for the in‐line monitoring of several critical manufacturing steps for advanced technologies that include high‐k/metal stacks, multi‐component metal silicides,10 and inlaid Cu interconnects on product wafers 11, 12. Measurement times, which strongly depend on the fluorescence yield of the detected elements, can be as short as 10 s per point for heavy metallic elements which ensures a wafer throughput that fulfills the wafer fab requirements.…”

Section: Applications Of X‐ray Spectroscopy Techniquesmentioning

confidence: 99%

Devices, Materials, and Processes for Nanoelectronics: Characterization with Advanced X‐Ray Techniques Using Lab‐Based and Synchrotron Radiation Sources

et al. 2011

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Future nanoelectronics manufacturing at extraordinary length scales, new device structures, and advanced materials will provide challenges to process development and engineering but also to process control and physical failure analysis. Advanced X‐ray techniques, using lab systems and synchrotron radiation sources, will play a key role for the characterization of thin films, nanostructures, surfaces, and interfaces. The development of advanced X‐ray techniques and tools will reduce risk and time for the introduction of new technologies. Eventually, time‐to‐market for new products will be reduced by the timely implementation of the best techniques for process development and process control. The development and use of advanced methods at synchrotron radiation sources will be increasingly important, particularly for research and development in the field of advanced processes and new materials but also for the development of new X‐ray components and procedures. The application of advanced X‐ray techniques, in‐line, in out‐of‐fab analytical labs and at synchrotron radiation sources, for research, development, and manufacturing in the nanoelectronics industry is reviewed. The focus of this paper is on the study of nanoscale device and on‐chip interconnect materials, and materials for 3D IC integration as well.

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“…For CL defects, X-ray Fluorescence (XRF) spectroscopy has recently been applied for the in-line measurement of catalyst loading [12,13]. Unfortunately, this technique cannot at this time provide 100% inspection for CL defects.…”

Section: Introductionmentioning

confidence: 99%

Rapid detection of defects in fuel-cell electrodes using infrared reactive-flow-through technique

Das

Weber

Bender

et al. 2014

Journal of Power Sources

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As fuel cells become more prominent, new manufacturing and production methods will need to be developed to deal efficiently and effectively with increased demand. One necessary component of this industrial growth is accurate measurement of the variability in the manufacturing process. In this study, we present a diagnostic system that combines infrared thermography with a reactive-flow-through technique to detect catalyst-loading defects in fuelcell gas-diffusion electrodes accurately with high spatial and temporal resolutions. Experimental results are compared with model predictions of thermal response with good agreement. Data analysis, operating-condition impacts, and detection limits are explored using both experiments and simulation. Overall, the results demonstrate the potential of this technique to measure defects on the millimeter length scale with temporal resolutions appropriate for use on a web-line. Thus we present the first development stage of a next-generation non-destructive diagnostic tool, which may be amenable to eventual use on roll-to-roll manufacturing lines.

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In-line monitoring of advanced microelectronic processes using combined X-ray techniques

Cited by 22 publications

References 0 publications

X-ray metrology for advanced microelectronics

X-ray metrology for advanced microelectronics

Devices, Materials, and Processes for Nanoelectronics: Characterization with Advanced X‐Ray Techniques Using Lab‐Based and Synchrotron Radiation Sources

Rapid detection of defects in fuel-cell electrodes using infrared reactive-flow-through technique

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