In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection

Solecky, Eric; Patterson, Oliver D.; Stamper, A. K.; Mclellan, Erin; Buengener, Ralf; Vaid, Alok; Hartig, Carsten; Bunday, Benjamin; Arceo, Abraham; Cepler, Aron

doi:10.1117/12.2010007

Cited by 15 publications

(8 citation statements)

References 25 publications

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“…These methods rely on image processing and machine learning algorithms and have been used for detecting scratches in Si wafers, , and defects in lithography and dry etching processes . As the critical device dimensions shrink, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) imaging, which provide a higher spatial resolution than optical methods, become indispensable metrology tools for the semiconductor industry. , For example, to perform high throughput defect inspection in photomasks, new advanced SEM methods have been introduced …”

Section: Resultsmentioning

confidence: 99%

“…33 As the critical device dimensions shrink, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) imaging, which provide a higher spatial resolution than optical methods, become indispensable metrology tools for the semiconductor industry. 34,35 For example, to perform high throughput defect inspection in photomasks, new advanced SEM methods have been introduced. 36 To overcome the challenges associated with identifying defects during nanofabrication of 3D devices, we implement a convolutional neural network (CNN) based machine learning model that classifies each nanopillar in TEM images as a collapsed or upright nanostructure with 99.84% accuracy on the training and validation data sets.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Deep Learning-Based High Throughput Inspection in 3D Nanofabrication and Defect Reversal in Nanopillar Arrays: Implications for Next Generation Transistors

Anand

Ghosh

Aabdin

et al. 2021

ACS Appl. Nano Mater.

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Densely packed high-aspect-ratio (HAR) nanostructures are the core elements of future microelectronics components. Manufacturing these nanostructures for device applications requires multiple fabrication steps involving wet processes, followed by a drying step. During drying, these nanostructures experience strong capillary forces that induce their bending and cause them to permanently stick to their neighbors, a phenomenon often referred to as pattern collapse. The pattern collapse and the difficulty in reliably identifying damaged nanostructures pose a critical challenge for the fabrication of HAR devices. Here, we developed a machine learning-based approach to identify collapsed nanostructures from a large patterned array of vertical Si nanopillars with 99.84% accuracy. Furthermore, we show that the pattern collapse can be reversed by selectively etching the native surface SiO2 layer of the nanopillars at their adhesions. Our approach for accurate and rapid identification of the collapsed nanostructures combined with the method to reverse this damage provides a versatile platform for developing high-yield fabrication processes for nanoscale semiconductor devices.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Deep Learning-Based High Throughput Inspection in 3D Nanofabrication and Defect Reversal in Nanopillar Arrays: Implications for Next Generation Transistors

Anand

Ghosh

Aabdin

et al. 2021

ACS Appl. Nano Mater.

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show abstract

“…One critical metrology tool for IC inspection is the electronbeam (E-beam) microscope used to resolve patterns at the single nanometer level to detect defects over the entire 300 mm diameter semiconductor wafer in a vacuum environment [200]. Such an inspection tool is essential to maintain reasonable product yields.…”

Section: Semiconductor Manufacturing Equipmentmentioning

confidence: 99%

Measurement technologies for precision positioning

et al. 2015

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“…Today, up to 50% of the fabrication process steps are devoted to inspection. 1 With the advent of new lithography techniques such as extreme ultraviolet lithography (EUVL) that allow the manufacture of chip node sizes below 10 nm, inspection tools need to be upgraded in order to detect smaller defects on wafers. Sub-nanometer resolution can be achieved with tools such as atomic force microscopy or scanning electron microscopy inspection systems.…”

Section: Introductionmentioning

confidence: 99%

“…Sub-nanometer resolution can be achieved with tools such as atomic force microscopy or scanning electron microscopy inspection systems. 1 These tools are extensively used for process development where sub-nm resolution is a priority. For the production line, where high throughput becomes essential, resolution sensitivity is currently larger than 20 nm.…”

Section: Introductionmentioning

confidence: 99%

Spectral emission properties of a laser-produced plasma light source in the sub-200 nm range for wafer inspection applications

Gambino

Rollinger

Hudgins

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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The spectral emission properties of a droplet-based laser-produced plasma are investigated in the vacuum ultraviolet (VUV) range. Measurements are performed with a spectrograph that operates from 30 to 180 nm with a spectral resolution of 0.1 nm. The emission spectra are recorded for different metal droplet targets, namely tin, indium, and gallium. Measurements were performed at different pressure levels of the background gas. Several characteristic emission lines are observed. The spectra are also calibrated in intensity in terms of spectral radiance to allow absolute emission power estimations from the light source in the VUV region. The presented experimental results are relevant for alternative light sources that would be needed for future wafer inspection tools. In addition, the experimental results help to determine the out-of-band radiation emission of a tin-based extreme ultraviolet (EUV) source. By tuning the type of fuel, the laser energies, and the background gas, the laser-produced plasma light source shows good capabilities to be operated as a light source that covers a spectral emission range from the EUV to the sub-200 nm range.

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In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection

Cited by 15 publications

References 25 publications

Deep Learning-Based High Throughput Inspection in 3D Nanofabrication and Defect Reversal in Nanopillar Arrays: Implications for Next Generation Transistors

Deep Learning-Based High Throughput Inspection in 3D Nanofabrication and Defect Reversal in Nanopillar Arrays: Implications for Next Generation Transistors

Measurement technologies for precision positioning

Spectral emission properties of a laser-produced plasma light source in the sub-200 nm range for wafer inspection applications

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