In Ga N ∕ Ga N multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

Abstract

We report growth of InGaN∕GaN multiple quantum wells (MQWs) on (111)-oriented bonded silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition (MOCVD). Prior to MOCVD growth of MQWs, about a 1.2μm thick GaN layer was deposited on SOI substrate with a high-temperature transitional buffer layer. The growth conditions were tuned to realize blue-green emission peaks centered around 420–495nm from such MQWs on SOI. X-ray diffraction, atomic force microscopy, scanning electronic microscopy, and photoluminescence techniques were used to characterize these MQWs. Such an approach to realize multicolor light-emitting layers on SOI substrates is suitable for the integration of InGaN∕GaN-based optoelectronic structures on SOI-based micro-optoelectromechanical systems and sensors.

Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate

“…However, the buried oxide layer (BOX) restrains the flexibility of top silicon layer (Fig. 1a) and may introduce extra thermal stress during cooling process [21][22][23]. Besides, according to the critical thickness condition theory, if the substrate thickness is less than its critical thickness of relaxation, the substrate can allow the growth of infinitely thick epilayers without misfit dislocations [24][25][26].…”

Kinetics study of orientation‐dependent surface blistering and exfoliation process in hydrogen‐implanted germanium

“…In particular, the mechanism behind the layer transfer induced by smart‐cut process can be identified by investigating the surface blistering and exfoliation behavior in hydrogen‐implanted substrate via a subsequent thermal annealing treatment . So far, a great amount of research has been endeavored to investigate the surface blistering and exfoliation behavior when using the smart‐cut process in fabricating SOI substrates . However, the number of relevant studies discussing the hydrogen‐induced surface blistering and exfoliation in germanium is extremely limited, which should be the reason why the commercialization of GeOI wafers is not widely available now.…”

In Ga N ∕ Ga N light emitting diodes on nanoscale silicon on insulator

“…Square-shaped mesa patterns are created by standard LED processing steps including multiple-mask photolithography, inductive coupled plasma etching, and contact metallization. [21][22][23][24][25][26][27] SOI wafers can be prepared by several methods, such as wafer bonding, smart cut, and separation by implantation of oxygen ͑SIMOX͒. © 2007 American Institute of Physics.…”