In-Field ${\rm J}_{\rm C}$ Enhancement on Ti-Sheathed ${\rm MgB}_{2}$ Wires Doped With TiC Nanoparticles

Abstract

Ti-sheathed MgB 2 wires doped with different amount of TiC nanoparticles were investigated. X-ray diffraction pattern suggested the existence of TiC 0 59 phase and carbon incorporation into MgB 2 lattice to form Mg(B 1 x C x ) 2 . Strong enhancement of in-field current carrying capability was observed on 2.5% TiC doped sample. The temperature effect was also studied. It was found that 850 C was the optimized annealing temperature.