In-Diffusion and Isothermal Annealing of Iron-Related Defects   in Czochralski N-Type Silicon

Diffusion and electrical properties of iron-related defects in n-type silicon are studied in Czochralski (CZ) and floating zone (FZ) silicon by means of deep level transient spectroscopy and the Hall effect. Introduction and annealing behaviors of electrically active iron-related defects reveal that these defects can be related to complexes containing interstitial iron atoms. The formation of iron-related defects at high temperatures includes defect reaction processes such that the observed complexes could be due to the intermediate states in consecutive reactions of iron-related complex formation. The electrically active complexes are independent of phosphorus or oxygen atoms. The iron-related defects observed in CZ silicon are identical to those observed in FZ silicon.

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Electrical Properties of Iron-Related Defects in Cz- And Fz-Grown N-Type Silicon

Kitagawa

Tanaka

1998

MRS Proc.

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Electrical properties of iron-related defects (IRD) introduced in n-type floating zoned (FZ) and Czochralski (CZ)-grown silicon are studied by deep level transient spectroscopy and Hall effect. Electrically active IRD have been observed for the first time in n-type CZ silicon. Enthalpy and entropy factors of electron emission rate of IRD are equivalent between those observed in CZ and FZ silicon. In-diffusion process at 1160° and isothermal annealing process at 150° also indicate the identical nature of IRD between CZ and FZ silicon, which can be understood in terms of the consecutive progress of iron-related complex-formation reactions including interstitial iron atoms (Fei) in the silicon crystal. The IRD is independent of oxygen and phosphorus atoms. Only a small fraction of Fei forms electrically ionizable complexes

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In-Diffusion and Isothermal Annealing of Iron-Related Defects in Czochralski N-Type Silicon

Cited by 3 publications

References 6 publications

Iron-related defect model in n-type silicon based on the electrical and diffusion properties

Iron-related defect model in n-type silicon based on the electrical and diffusion properties

Diffusion and Electrical Properties of Iron-Related Defects in N-Type Silicon Grown by Czochralski- and Floating Zone Method

Electrical Properties of Iron-Related Defects in Cz- And Fz-Grown N-Type Silicon

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