Abstract:Diffusion and electrical properties of iron-related defects
in n-type silicon are studied in Czochralski (CZ) and floating
zone (FZ) silicon by means of deep level transient spectroscopy
and the Hall effect. Introduction and annealing behaviors of
electrically active iron-related defects reveal that these
defects can be related to complexes containing interstitial
iron atoms. The formation of iron-related defects at high
temperatures includes defect reaction processes such that
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