In depth characterization of electron transport in 14 nm FD-SOI CMOS devices

Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

“…8 and 9 that, even after the R sd correction, the effective mobility still exhibit strong gate length dependence but a weak gate voltage variation. This confirms that the main origin of the mobility degradation with gate length is not due to the series resistance effect but due to the decrease of the low field mobility l 0 in short channel devices, likely stemming from enhanced scattering rate near source and drain regions [18,19]. It is also worth noting from Fig.…”

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

“…2(b)], these effects had to be considered. A good agreement between experimental results and compact modeling was obtained with a DIBL factor λ in (6) equal to 0.7 and an effective channel length L = L mask − L where L = 15 nm, which is consistent with L eff extraction from split C-V measurements [14], [18]. The fitting value of carrier saturation velocity is around v sat ≈ 2 × 10 7 cm/s, which is larger than in bulk case or in longer devices, consistently with the possible contribution of nonstationary transport.…”

“…Details about the physical background of μ MR extraction can be found elsewhere [12], [14]. In short, under the condition that W L, the Hall voltage generated by the applied magnetic field is almost short circuited by source and drain contacts, so that μ MR can be extracted from the drain current variation as a function of the magnetic field from…”

“…However, this effect is attenuated because the low-field mobility in 30-nm GO1 devices (15-nm effective length) is much smaller than in 150-nm GO2 ones. This mobility degradation at short-channel lengths in GO1 devices has been attributed to enhanced process-induced neutral defect scattering due to source/drain proximity [9], [11], [19], [20].…”

28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K

“…Indeed, detailed studies of µ temperature behavior in devices with different lengths originated from such kind of process [6], [13] revealed the µ in short-channel devices is strongly degraded by the presence of process-induced defects in the extensions and near source/drain regions. Thus, resulting µ temperature dependence is defined through the balance between Coulomb scattering on the defects (with µ c reduction with T lowering) and phonon scattering (with µ ph increase with T lowering) [6], [7], [11], [13]. Detailed study of mobility in such kind of devices at different temperatures is out of scope of this paper and can be found in [6] and [13].…”