2007
DOI: 10.1063/1.2790824
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In As ∕ Al As Sb based quantum cascade lasers

Abstract: The advantages and drawbacks of the different semiconductor materials which can be used for the fabrication of quantum cascade laser (QCL) emitting in the 3–4μm wavelength range bring us to propose a material combination which can be lattice matched to InAs substrate. It is shown that using InAs quantum wells and AlAsSb barriers, it is possible to balance the strain in QCL structures made on InAs whatever the active region design and the wavelength targeted. A first InAs∕AlAsSb QCL structure has been grown and… Show more

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Cited by 16 publications
(6 citation statements)
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“…Reaching wavelengths below 4 lm has proven to be very challenging [17,[43][44][45][46][47][48]. However this situation may soon change, as research in this field is active in several groups [45][46][47][49][50][51][52][53][54]. In the most widely used AlInAs/GaInAs material system, a short-wavelength mid-infrared QCL, emitting pulsed at 3.5 lm (at 280 K), was demonstrated using strain-compensated AlInAs/GaInAs on InP substrates [43].…”
Section: Quantum Cascade Laser Properties and Vendorsmentioning
confidence: 97%
“…Reaching wavelengths below 4 lm has proven to be very challenging [17,[43][44][45][46][47][48]. However this situation may soon change, as research in this field is active in several groups [45][46][47][49][50][51][52][53][54]. In the most widely used AlInAs/GaInAs material system, a short-wavelength mid-infrared QCL, emitting pulsed at 3.5 lm (at 280 K), was demonstrated using strain-compensated AlInAs/GaInAs on InP substrates [43].…”
Section: Quantum Cascade Laser Properties and Vendorsmentioning
confidence: 97%
“…[31][32][33][34][35][36] However this situation may soon change, for research in this field is active in several groups. [33][34][35][37][38][39][40][41][42] In the most widely used AlInAs/GaInAs material system, a short-wavelength midinfrared QCL, emitting pulsed at 3.5 μm (at 280 K), was demonstrated using straincompensated AlInAs/GaInAs on InP substrates. 31 Shorter wavelengths down to 3.0 μm are possible, but at a cost of substantially lower temperatures.…”
Section: Short-wavelength Mid-ir Qclsmentioning
confidence: 99%
“…Similar structures reported in literature often employ special shutter sequences at each interface to minimize the cross incorporation of the group V materials and thereby enhance the quality of the interface. [17][18][19] These growth interrupts, however, significantly prolong the growth time, e.g., with respect to the sequence described in Ref. 20 by 50% for this sample.…”
mentioning
confidence: 99%