In
                  1−x
                Mn
                  x
              Sb
          —a narrow-gap ferromagnetic semiconductor

Wójtowicz, T.; Cywiński, G.; Lim, W. L.; Liu, X.; Dobrowolska, M.; Furdyna, J. K.; Yu, K. M.; Walukiewicz, W.; Kim, G. B.; Cheon, M.; Chen, X.; Wang, S. M.; Luo, Hong‐Gang

doi:10.1063/1.1583142

Cited by 74 publications

(57 citation statements)

References 12 publications

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“…Exploration of alternative diluted magnetic semiconductor (DMS) structures can broaden the scope of our understanding of the underlying physics of these materials more generally and will promote progress toward realizing applications [2]. So far, ferromagnetism has been reported in a variety of semiconductor hosts where Mn is the magnetic ion including II-VI [3], III-V [1,4], and group IV [5] tetrahedrallybonded semiconductors. Additionally, studies involving incorporation of alternative ions such as chromium have resulted in stimulated magnetic order.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature ferromagnetic properties of the diluted magnetic semiconductorSb2−xCrxTe3

et al. 2005

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We report on magnetic and electrical transport properties of Sb 2-x Cr x Te 3 single crystals with 0 ≤ x ≤ 0.095 over temperatures from 2 K to 300 K. A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x > 0.014), attaining a maximum value of 20 K for x = 0.095. Hysteresis below T C for applied field parallel to the c-axis is observed in both magnetization and Hall effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3d 3 ) valence state, substituting for antimony in the host lattice structure, and does not significantly affect the background hole concentration. Analysis of the anomalous Hall effect reveals that skew scattering is responsible for its presence. These results broaden the scope of ferromagnetism in the V 2 -VI 3 diluted magnetic semiconductors (DMS) and in ferromagnetic DMS structures generally.

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Section: Introductionmentioning

confidence: 99%

Low-temperature ferromagnetic properties of the diluted magnetic semiconductorSb2−xCrxTe3

et al. 2005

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“…13 Most current understanding of the InMnSb system is gleaned from static magnetization and electrical transport measurements. [11][12][13][14][15] Here we report spin/carrier relaxation measurements on III-Mn-V narrow gap system grown by molecular beam epitaxy technique. 16 We measure the above relaxations using femtosecond laser pulses with two different energies per pulse, resulting in different laser fluences and therefore different photoinduced carrier densities.…”

mentioning

confidence: 99%

“…In this work, in addition to InMnSb, we have studied two nonferromagnetic low temperature ͑LT͒ grown materials, LTInSb, and LT-InBeSb with ϳ1% Be concentration 11,12 ͑with similar growth conditions͒, the comparison with which allows us to infer the effect of Mn on spin/carrier dynamics in InMnSb. The samples and their characteristics are listed in Table I, the detail of growth conditions can be found in Refs.…”

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confidence: 99%

“…It is therefore important in this context to explore the opposite extreme of the III-Mn-V ternaries, i.e., InMnSb, 11,12 which has the largest lattice constant in this family of materials. In spite of its low T C , InMnSb has significant potential for application in infrared spin photonics and in spin transport devices because it has the smallest effective mass of the holes, and thus a much higher hole mobility than the other IIIMn-V ferromagnetic semiconductors.…”

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confidence: 99%

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Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

Nontapot

Kini

Gifford

et al. 2007

Applied Physics Letters

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“…Fortunately, for higher mobility ferromagnetic semiconductors, such as In 1−x Mn x Sb, the Schottky barrier is thin, which makes the S/In 1−x Mn x Sb interface highly transparent and thus the AR methods applicable [17,18,19]. …”

Section: Introductionmentioning

confidence: 99%

Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor

Krivoruchko

Tarenkov

Varyukhin

et al. 2010

Journal of Magnetism and Magnetic Materials

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Narrow-gap higher mobility semiconducting alloys In 1−x Mn x Sb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In 0.98 Mn 0.02 Sb was detected by the observation of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional (reentrant) magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of (III,Mn)V semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of (InMn)Sb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection (AR) spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers (up to 65% at 4.2K) within a cluster.

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In 1−x Mn x Sb —a narrow-gap ferromagnetic semiconductor

Cited by 74 publications

References 12 publications

Low-temperature ferromagnetic properties of the diluted magnetic semiconductorSb2−xCrxTe3

Low-temperature ferromagnetic properties of the diluted magnetic semiconductorSb2−xCrxTe3

Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor

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