Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

Abstract

.; Kini, R. N.; Gifford, A.; et al., "Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films," Appl. Phys. Lett. 90, 143109 (2007); http:// dx

Time resolved magneto-optical studies of ferromagnetic InMnSb films

“…The data presented in Fig. 1͑b͒ for sample D ͑with 2.8% Mn͒ show no strong temperature dependence below and above the T C , similar to our earlier measurements on the samples with 2.0% Mn, 7 suggesting possible lack of interaction between the spins of photoexcited carriers and the Mn ions.…”

“…4͑a͒ for sample D ͑with 2.8% Mn͒, the temperature dependence of photoinduced carrier density is not significant, similar to our earlier observations on InMnSb ferromagnetic films with 2.0% Mn concentration. 7 Lack of temperature and field dependence has also been reported previously in GaMnAs containing 2% Mn. 15 In order to probe the possible contribution from the CdTe/ GaAs layers to our measurements presented, temperature and wavelength dependences of the photoinduced carrier relaxations were measured on a template with CdTe ϳ4.5 m. No differential reflectivity signal was observed from the template sample in the temperature range of our measurements on the InMnSb films.…”

“…1͑b͒ shows the temperature dependence of the MOKE signal for sample D. The observed signals for samples A and D show relaxation times of 1 and 1.8 ps, almost a factor of 10 faster compared to our earlier reported spin relaxation times of 10 and 25 ps for samples B and C, respectively. 7 We believe that the differences are influenced by the samples' individual characteristics as a result of the slight variation in their growth conditions. The data presented in Fig.…”

Time-resolved differential transmission in MOVPE-grown ferromagnetic InMnAs

“…[10][11][12][13] In the reported measurements, rapid change of the differential reflectivity was observed and ascribed to a fast disappearance of photoinduced free carriers through ultrafast trapping by midgap states. The carrier relaxation time reported in the MBE grown InMnAs 12 demonstrated a similar time scale as an InAs film under similar experimental conditions.…”

Group III–V Semiconductor High Electron Mobility Transistor on Si Substrate

“…The magnetic property analysis for the InMnSb compound was made for both powder samples and thin ilms with varying compositions of doping. Mn doping into InSb results in some interesting properties such as photoinduced spin efect, optical response, cyclotron resonance and magneto transport [11][12][13][14][15][16][17].…”