Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling

Hofsäß, H.; Wahl, Ulrich; Jahn, S.G.

doi:10.1007/bf02060641

Cited by 21 publications

(13 citation statements)

References 19 publications

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“…Several reviews on emission channeling can be found in the literature [34][35][36][37]. The production of radioisotopes and implantation into single-crystalline ZnO and thin film GaN samples at 60 keV and fluences around 1-3×10 13 cm −2 was done at CERN's ISOLDE facility [38,39].…”

Section: Methodsmentioning

confidence: 99%

“…A position-sensitive electron detector was used in order to measure the angle-dependent electron emission yield around various crystallographic directions [40]. Quantitative results were achieved by comparing the experimental data with theoretical patterns calculated by means of the "manybeam" formalism [34][35][36][37] for a wide range of possible lattice sites. The fitting procedures used for that purpose have been described in detail previously [37,40].…”

Section: Methodsmentioning

confidence: 99%

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Recent Emission Channeling Studies in Wide Band Gap Semiconductors

Wahl¹,

Correia²,

Rita³

et al. 2005

Hfi/Nqi 2004

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Abstract. We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

Wahl¹,

Correia²,

Rita³

et al. 2005

Hfi/Nqi 2004

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“…Theoretical electron channelling effects may be obtained by calculations using the so-called many-beam formulation of electron motion (described in detail in Ref. [11]). The comparison of measurement and calculation provides a precise determination of lattice site occupation [12].…”

Section: Methods and Experimentsmentioning

confidence: 99%

Amorphization of ZnSe by ion implantation at low temperatures

Jahn

Hofsäß

Restle

et al. 1996

Ion Beam Modification of Materials

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Radioactive Cd and Se ions were implanted into high-resistivity ZnSe single crystals around 60 K and 300 K. Their lattice sites were determined by measuring the channelling and blocking effects of the emitted conversion electrons or positrons directly after implantation and after annealing at different temperatures up to 600 K. Implantation doses were in the range of 3 × 10 12 -3 × 10 13 /cm 2 . The experimental results of this emission channelling technique yield a high substitutional fraction of the implanted ions directly after implantation at room temperature. At 60 K the substitutional fraction of implanted ions is highly sensitive to the ion dose. Above a critical dose of around 1.4 × 10 13 Cd/cm 2 or 2.1 × 10 13 Se/cm 2 the substitutional fraction completely disappears indicating an amorphous surrounding of the probe atom. Damage recovery was observed below room temperature and at an annealing temperature around 500 K. A quantitative analysis of measured channelling yields will be given by comparison with calculated electron channelling profiles based on the dynamical theory of electron diffraction.

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“…The MANYBEAM code was found to accurately describe electron emission channeling effects in a variety of cases [1][2][3][4], provided of course that a sufficient number of Fourier components, which increases with electron energy and nuclear charge of the crystal atoms, were considered. For instance, in order to calculate the yields from 150 keV electrons in Si within a convergence precision better than 0.5%, at least "16-beam" simulations are needed, i.e.…”

Section: Data Analysis Proceduresmentioning

confidence: 99%

“…determining the lattice location of impurity atoms in single crystals by means of channeling and blocking of charged particles emitted in nuclear decay, is a well-established technique among the various nuclear solid state methods at CERN's on-line isotope separator facility ISOLDE. It has been reviewed several times in the past [1][2][3][4][5]. Rather than discussing general aspects of the technique this paper focuses mainly on recent new developments and the current status of the research on the lattice locations of rare earth and transition metal atoms in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Wahl¹

2000

Hyperfine Interactions

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This paper reports on recent advances in the application of electron emission channeling to studies of the lattice location of radioactive probe atoms in semiconductors. The introduction of position-sensitive electron detection has resulted in an improvement in the experimental efficiency of this method by two orders of magnitude. Electron emission channeling now allows to carry out detailed lattice location studies, and is especially interesting for cases where conventional ion beam lattice location techniques can not be applied due to a lack of sensitivity. Characteristic features of electron emission channeling with position-sensitive detection are discussed and illustrated by results on the lattice location of Er in Si and GaAs, and on the lattice sites and stability of implanted transition metals in Si.

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Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling

Cited by 21 publications

References 19 publications

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

Amorphization of ZnSe by ion implantation at low temperatures

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