Abstract:Radioactive Cd and Se ions were implanted into high-resistivity ZnSe single crystals around 60 K and 300 K. Their lattice sites were determined by measuring the channelling and blocking effects of the emitted conversion electrons or positrons directly after implantation and after annealing at different temperatures up to 600 K. Implantation doses were in the range of 3 × 10 12 -3 × 10 13 /cm 2 . The experimental results of this emission channelling technique yield a high substitutional fraction of the implante… Show more
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