Impurity incorporation and structural defects in hydride VPE InP films

Attolini, G.; Fornari, R.; Pelosi, C.; Oswald, J.; Šimeček, T.

doi:10.1016/0022-0248(86)90465-3

Cited by 2 publications

(1 citation statement)

References 15 publications

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“…In summary, within the EBSD resolution, most of the area around the hillocks have good crystallinity, although these areas have poor electro-optical properties, as demonstrated by the TI measurements. The whole region most likely has a high density of extended defects or point defects that lower the luminescence (Attolini et al, 1986a(Attolini et al, , 1986b but are not detectable by EBSD. It is important, therefore, to monitor optical and electrical behavior, with demonstration here of the ability of the TI approach to do both simultaneously.…”

Section: Resultsmentioning

confidence: 99%

Carrier-Transport Study of Gallium Arsenide Hillock Defects

Xiao

Jiang

et al. 2019

Microsc Microanal

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Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In this paper, we applied near-field transport imaging to study hillock defects in a GaAs thin film. On the same defects, we also performed near-field cathodoluminescence, standard cathodoluminescence, electron-backscattered diffraction, transmission electron microscopy, and energy-dispersive X-ray spectrometry. We found that the luminescence intensity around the hillock area is two orders of magnitude lower than on the area without hillock defects in the millimeter region, and the excess carrier diffusion length is degraded by at least a factor of five with significant local variation. The optical and transport properties are affected over a significantly larger region than the observed topography and crystallographic and chemical compositions associated with the defect.

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Section: Resultsmentioning

confidence: 99%

Carrier-Transport Study of Gallium Arsenide Hillock Defects

Xiao

Jiang

et al. 2019

Microsc Microanal

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Electro‐optical properties of InGaAs layers grown by hydride vapour phase epitaxy

Attolini¹,

Bocchi²,

Fornari³

et al. 1990

Cryst. Res. Technol.

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A series of epitaxial layers of the InGaAs alloy were deposited on (001) oriented InP substrates by using hydride VPE technique. The layers were characterized by Double Crystal Diffractometry (DCD), Photoluminescence (PL), Hall effect and Capacitance-Voltage (C-V) measurements. The growth parameters and the quality of the grown layers are discussed on the basis of electrical and structural data analysis.

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Impurity incorporation and structural defects in hydride VPE InP films

Cited by 2 publications

References 15 publications

Carrier-Transport Study of Gallium Arsenide Hillock Defects

Carrier-Transport Study of Gallium Arsenide Hillock Defects

Electro‐optical properties of InGaAs layers grown by hydride vapour phase epitaxy

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