Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role of hydrogen

Abstract

2014 Cet article résume les études effectuées par les auteurs sur le comportement physico-chimique de quelques impuretés (P, C, H) dans le silicium. Les résultats portent sur : la diffusion et la ségrégation d'impuretés dans le silicium mono et polycristallin, la passivation des défauts recombinants par l'hydrogène, les interactions hydrogène-dopants. Un accent particulier est mis sur le comportement et la diffusion de l'hydrogène. Les résultats sont discutés en tenant compte de l'existence de mécanismes complexes d'interactions entre l'hydrogène et les impuretés ou les défauts.Abstract. 2014 An overview of the studies done by the authors on the physicochemical behaviour of some impurities (P, C, H) in silicon is given. Results concern : diffusion and segregation of impurities in mono and polycrystalline silicon, passivation of recombining defects by hydrogen, hydrogen-dopant interaction. A more focused interest is given on hydrogen diffusion and behaviour. The results are discussed, taking into account the existence of complex mechanisms of interaction between hydrogen and impurities or defects.

Hydrogen Diffusion in Iron Oxides (Nb‐Doped Fe2 O 3 and FeO)

“…These profiles are similar to data reported in the literature on the diffusion on hydrogen in semiconductors, especially p-doped silicon and p-doped III-V compounds (9,10). They indicate the presence of different diffusing species in Nb~Fe2_~O~ as has been demonstrated in the case of semiconductors (9,11,12). The large deuterium concentration on the surface may be explained by superficial plasma-induced degradation (13) and/or by the formation of D2 molecules (9).…”

“…The large deuterium concentration on the surface may be explained by superficial plasma-induced degradation (13) and/or by the formation of D2 molecules (9). As has been sometimes observed (11), the deuterium concentration at the surface 1022 varies with the temperature at which deuterium is introduced into the samples; this concentration decreases U when the temperature is increased. 102t The doping with Nb (V) leads to the reduction of Fe (III) to Fe (II); the electrical properties of the single crystals re-_ 102o|i sult from a hopping process between Fe (III) and Fe (II) '~ since no spinel phase inclusions are present (the activation \ 101s energy for this process is about 0.2 eV).…”

Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs

“…Therefore grain boundaries do not undergo any observable passivation effect. In Si, it has been shown that the passivation of grain boundaries by hydrogen depends on the nature of the boundaries and their thermal history [4,12]. Here, in GaAs, black dots appear within the grains (Fig.…”

“…23 There is a growing interest for the influence of hydrogen on semiconductor properties as recently reviewed [1]. In Si and GaAs, it has been shown that the free carrier concentration is decreased as a consequence of a shallow dopant passivation effect by hydrogen [2][3][4]. Only limited investigation has been made on semi-insulating GaAs.…”

Photoelectrochemical measurement of effective diffusion length of carriers in lamellar semiconductors. Application to InSe

“…[8][9] as well at the photoresponse [10] or L.B.I.C. [11] methods have been used with such liquid contacts.…”