Impurity Contamination and Diffusion during Annealing in Implanted ZnO

Sakaguchi, Isao; Adachi, Yutaka; Ogaki, Takeshi; Matsumoto, Kenji; Hishita, Shunichi; Haneda, Hajime; Ohashi, Naoki

doi:10.4028/www.scientific.net/kem.388.23

Cited by 5 publications

(7 citation statements)

References 7 publications

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“…The effect of extra heat-treatment has been investigated when heat-treating the samples at 600°C, especially to initiate the diffusion of Li ions. A heat-treatment at this temperature ensures a high diffusion coefficient of Li in ZnO [21].…”

Section: Methodsmentioning

confidence: 99%

“…We have undertaken heat treatment of ZnO:Li and ZnO:Li-Yb nanopowders at 600°C because it is known that the Li ions become mobile in ZnO crystalline network at this temperature [21]. On the other hand, a decrease in the intensity of Li-band may be due to a heat treatment induced condensation of Li ions into metallic Li droplets thus resulting in a decrease of the number of luminescent Li-Li nanoclusters.…”

Section: Effect Of Heat Treatment In Air On LI Luminescencementioning

confidence: 99%

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Quantum cutting in Li (770 nm) and Yb (1000 nm) co-dopant emission bands by energy transfer from the ZnO nano-crystalline host

Shestakov¹,

Tikhomirov²,

Kirilenko³

et al. 2011

Opt. Express

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Li-Yb co-doped nano-crystalline ZnO has been synthesized by a method of thermal growth from the salt mixtures. X-ray diffraction, transmission electron microscopy, atomic absorption spectroscopy and optical spectroscopy confirm the doping and indicate that the dopants may form Li-Li and Yb(3+)-Li based nanoclusters. When pumped into the conduction and exciton absorption bands of ZnO between 250 to 425 nm, broad emission bands of about 100 nm half-height-width are excited around 770 and 1000 nm, due to Li and Yb dopants, respectively. These emission bands are activated by energy transfer from the ZnO host mostly by quantum cutting processes, which generate pairs of quanta in Li (770 nm) and Yb (1000 nm) emission bands, respectively, out of one quantum absorbed by the ZnO host. These quantum cutting phenomena have great potential for application in the down-conversion layers coupled to the Si solar cells.

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Section: Methodsmentioning

confidence: 99%

Section: Effect Of Heat Treatment In Air On LI Luminescencementioning

confidence: 99%

Quantum cutting in Li (770 nm) and Yb (1000 nm) co-dopant emission bands by energy transfer from the ZnO nano-crystalline host

Shestakov¹,

Tikhomirov²,

Kirilenko³

et al. 2011

Opt. Express

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“…The values of D b of Li in AlZnO were smaller than those in non-doped ZnO ceramics by a factor of about 0.2. In our previous study, 20) Li diffusion in non-doped ZnO was written as D Li ðcm 2 =sÞ ¼ 4:7 Â 10 À2 exp½À243:5 ðkJ=molÞ= RT . The activation energy determined in this study is larger than that in the previous study 20) because of the effect of Al in ZnO.…”

Section: Resultsmentioning

confidence: 99%

“…In our previous study, 20) Li diffusion in non-doped ZnO was written as D Li ðcm 2 =sÞ ¼ 4:7 Â 10 À2 exp½À243:5 ðkJ=molÞ= RT . The activation energy determined in this study is larger than that in the previous study 20) because of the effect of Al in ZnO. Moreover, it is pointed out here that the activation energy for Li diffusion in AlZnO is in good agreement with that for the oxygen self-diffusion in the same samples.…”

Section: Resultsmentioning

confidence: 99%

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Simultaneous Diffusion of Oxygen Tracer and Lithium Impurity in Aluminum Doped Zinc Oxide

Sakaguchi

Watanabe

Adachi

et al. 2011

Jpn. J. Appl. Phys.

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Aluminum-doped zinc oxide ceramics were used to study oxygen self-diffusion by the vapor–solid exchange method. The diffusion profile and the quantitative analysis of impurities (H, Li, and Al) were performed by secondary ion mass spectrometry. The concentrations of Al and H in ZnO were evaluated to be 3.2×1019 and below 1.5×1017/cm3, respectively. The simultaneous diffusion of oxygen tracer and Li impurity were detected in the analysis, and the diffusion profiles were analyzed to evaluate the diffusion coefficients. Enhanced oxygen diffusivity and increased Li impurity concentration was obtained in Al-doped ZnO. We discuss the defect equations for enhancing oxygen diffusivity and increasing Li concentration in Al-doped ZnO.

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Relationship between Aluminum and Lithium and Annealing for Reducing Lithium Contamination in Aluminum-Implanted Zinc Oxide

Sakaguchi

Matsumoto

Ohgaki

et al. 2010

KEM

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The relationship between Al and Li during diffusion was studied using Al-implanted ZnO. The Al donor in ZnO acts to increase the concentration of Li contamination from the atmosphere during the annealing. It is difficult to decompose the relationship formed by diffusion between Al and Li during high-temperature annealing. The most effective method to decompose the relationship is to anneal the as-implanted ZnO at a pressure of 5×10-3 torr. This annealing increases the Al solubility limit because the ZnO surface evaporates.

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Impurity Contamination and Diffusion during Annealing in Implanted ZnO

Cited by 5 publications

References 7 publications

Quantum cutting in Li (770 nm) and Yb (1000 nm) co-dopant emission bands by energy transfer from the ZnO nano-crystalline host

Quantum cutting in Li (770 nm) and Yb (1000 nm) co-dopant emission bands by energy transfer from the ZnO nano-crystalline host

Simultaneous Diffusion of Oxygen Tracer and Lithium Impurity in Aluminum Doped Zinc Oxide

Relationship between Aluminum and Lithium and Annealing for Reducing Lithium Contamination in Aluminum-Implanted Zinc Oxide

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