2010
DOI: 10.4028/www.scientific.net/kem.445.205
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Relationship between Aluminum and Lithium and Annealing for Reducing Lithium Contamination in Aluminum-Implanted Zinc Oxide

Abstract: The relationship between Al and Li during diffusion was studied using Al-implanted ZnO. The Al donor in ZnO acts to increase the concentration of Li contamination from the atmosphere during the annealing. It is difficult to decompose the relationship formed by diffusion between Al and Li during high-temperature annealing. The most effective method to decompose the relationship is to anneal the as-implanted ZnO at a pressure of 5×10-3 torr. This annealing increases the Al solubility limit because the ZnO su… Show more

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Cited by 4 publications
(8 citation statements)
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“…The same diffusion profiles of Al and Li in bulk diffusion strongly suggest the interaction of Al and Li during pre-annealing. 14) The bulk diffusion coefficient, D b , of Al and Li in the pre-annealed sample were estimated to be about 5 © 10 ¹14 cm 2 /s. Al and Li profiles showed the different concentration gradients along the grain boundary.…”
Section: Methodsmentioning
confidence: 97%
See 1 more Smart Citation
“…The same diffusion profiles of Al and Li in bulk diffusion strongly suggest the interaction of Al and Li during pre-annealing. 14) The bulk diffusion coefficient, D b , of Al and Li in the pre-annealed sample were estimated to be about 5 © 10 ¹14 cm 2 /s. Al and Li profiles showed the different concentration gradients along the grain boundary.…”
Section: Methodsmentioning
confidence: 97%
“…13) Our pioneer research indicated that Al incorporation in ZnO leads to increase the concentration of Li contaminant for annealing. 14) Moreover, the defect chemistry in Al-doped ZnO was studied through the diffusion of O and Li. 15) The results of this paper are described shortly in the below.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, we confirmed Li contamination in Al-implanted ZnO ceramics during the annealing. 17) From the study of Ref. 17), the oxygen interstitials in ZnO lattice are possible to accelerate the Li contamination.…”
Section: Resultsmentioning
confidence: 99%
“…17) From the study of Ref. 17), the oxygen interstitials in ZnO lattice are possible to accelerate the Li contamination. The defect concentration responsible for oxygen bulk diffusion decreases, and then the bulk diffusion coefficient becomes small.…”
Section: Resultsmentioning
confidence: 99%
“…13) From a series of studies using Al-implanted ZnO, we found evidence of Li diffusion and contamination from the sample surface during the annealing. 14) Diffusing Li reduces the electrical performance of donor-doped ZnO, because Li acts as the acceptor in ZnO. From the previous study, we have found that Al-doped ZnO can avoid the Li contamination in the sintering under low oxygen partial pressure.…”
Section: Introductionmentioning
confidence: 99%