1996
DOI: 10.1103/physrevb.53.6385
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Impurity and doping effects on the pseudoenergy gap in CeNiSn: A Sn NMR study

Abstract: We report the discovery of pressure-induced superconductivity in a semimetallic magnetic material CeTe 1.82 . The superconducting transition temperature T c ϭ2.7 K ͑well below the magnetic ordering tempera-tures͒ under pressure (Ͼ2 kbar) is remarkably high, considering the relatively low carrier density due to a charge-density-wave transition associated with lattice modulation. The mixed magnetic structure of antiferromagnetism coexisting with ferromagnetism can provide a clue for this high T c . We discuss a … Show more

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Cited by 65 publications
(49 citation statements)
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“…1, 2) located at the Fermi level. Our calculations agree with NMR experiment [30] and always predict the small DOS at F. However, a standard resolution of only 0.4 eV of the measured VB XPS spectra makes discussing of the Kondo-insulator behavior impossible. The spectra are detected at room temperature, while the calculations have been done for the ground state.…”
Section: Electronic Structure Of Cenisn and Cerhsbsupporting
confidence: 77%
“…1, 2) located at the Fermi level. Our calculations agree with NMR experiment [30] and always predict the small DOS at F. However, a standard resolution of only 0.4 eV of the measured VB XPS spectra makes discussing of the Kondo-insulator behavior impossible. The spectra are detected at room temperature, while the calculations have been done for the ground state.…”
Section: Electronic Structure Of Cenisn and Cerhsbsupporting
confidence: 77%
“…In CeRhSb and CeNiSb, which form orthorhombic structures, 1/T 1 is explained by the Vshaped gap model. 22,23 In Ce 3 Bi 4 Pt 3 , which forms a cubic structure, 1/T 1 that decreases exponentially is explained by assuming an isotropic gap model with a rectangular DOS. 24 The difference in the gap structure for the "Kondo" insulators may be related to their crystal structure.…”
Section: ′′mentioning
confidence: 99%
“…NMR data [14] and resistivity data indicate gap closure for x ~ 0.1. At this doping level the unit cell volume increase corresponds to the increase for CePt0.2Ni0.8Sn where the gap is also just closed.…”
Section: Cecuxnil_xsn (X =005 01 02)mentioning
confidence: 99%