Improving Zr0.5Hf0.5O₂-based charge-trapped performance by graphene oxide quantum dots

Abstract

In this work, graphene oxide quantum dots (GOQDs) are introduced as an electron-trapped layer in Pd/Zr[Formula: see text]Hf[Formula: see text]O2 (ZHO)/SiO2/Si memory device. This structure possessed longer than 104 s retention capability, a low operation voltage around [Formula: see text][Formula: see text]V and 2.61[Formula: see text]V storage windows. GOQDs contained carbon–carbon and carbon–oxygen single/double bonds based on the analysis of C-1[Formula: see text] and O-1[Formula: see text] X-ray photoelectron spectra. It is proposed that the GOQDs’ wide bandgap with many oxygen-containing functional groups favors charge capture to a greater extent. This new type of charge-trapping memory can be a promising candidate for wide application to storing information with non-volatility in the big data era.

Characteristics, properties, synthesis and advanced applications of 2D graphdiyne versus graphene

“…8 All of these unexpected properties give GR unusual electrical and optical properties and its potential for use in various areas such as microtransistors, solar cells, batteries, and catalysts, and so on. 9–26 Nowadays, GR has definitely been one of the most popular materials in the world, not only for scientific research but also for industrial uses. Its widespread applications and outstanding performance in electronics, photocatalysts, photoelectronics, and medical areas have led it to be called “the wonder material”.…”

Optimization of quantum yield of highly luminescent graphene oxide quantum dots and their application in resistive memory devices

“…In a very recent report, Kang et al [20] have synthesized GOQDs by following pulsed laser ablated in liquid (PLAL) technique with coal as the source of carbon and achieved QY of about 18%. Besides their optoelectronic applications, in numerous report, GOQDs have been judiciously employed as active charge trapping materials [27][28][29]. Obreja et al have shown the memristive response (electrical hysteresis) of GQDs embedded in a semiconducting poly(3-hexylthiophene) polymeric matrix [30].…”