Optimization of quantum yield of highly luminescent graphene oxide quantum dots and their application in resistive memory devices

Das, Rakesh; Gogoi, Koustav Kashyap; Das, Nipom Sekhar; Chowdhury, Avijit

doi:10.1088/1361-6641/ab5175

Cited by 14 publications

(9 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, the lattice fringe of GO QDs observed using high-resolution transmission electron microscopy (HR-TEM) is 0.245 nm, and its corresponding plane is the [1120] plane. 31 The X-ray photoelectron spectroscopy (XPS) spectrum of the GO QDs is shown in Figure 2a. The analysis results indicate that the two peaks, one at 284.08 eV and the other at 531.68 eV, correspond to C(1s) and O(1s), respectively.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Therefore, this device has the potential to be fabricated into large synaptic device arrays for future high-density neuromorphic computing. , The image obtained using transmission electron microscopy (TEM) shows that the GO QDs synthesized using the hydrothermal method possess a uniform size, with diameters ranging from approximately 4 to 6 nm, as illustrated in Figure b. In addition, the lattice fringe of GO QDs observed using high-resolution transmission electron microscopy (HR-TEM) is 0.245 nm, and its corresponding plane is the [1120] plane …”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Highly Reliable Performance of Flexible Synaptic Devices Based on PVP–GO QD Nanocomposites Due to the Formation of Directional Filaments

Li,

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The metallic conductive filament (CF) model, which serves as an important conduction mechanism for realizing synaptic functions in electronic devices, has gained recognition and is the subject of extensive research. However, the formation of CFs within the active layer is plagued by issues such as uncontrolled and random growth, which severely impacts the stability of the devices. Therefore, controlling the growth of CFs and improving the performance of the devices have become the focus of that research. Herein, a synaptic device based on polyvinylpyrrolidone (PVP)/graphene oxide quantum dot (GO QD) nanocomposites is proposed. Doping GO QDs in the PVP provides a large number of active centers for the reduction of silver ions, which allows, to a certain extent, the growth of CFs to be controlled. Because of this, the proposed device can simulate a variety of synaptic functions, including the transition from long-term potentiation to long-term depression, paired-pulse facilitation, post-tetanic potentiation, transition from short-term memory to long-term memory, and the behavior of the "learning experience". Furthermore, after being bent repeatedly, the devices were still able to simulate multiple synaptic functions accurately. Finally, the devices achieved a high recognition accuracy rate of 89.39% in the learning and inference tests, producing clear digit classification results.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Highly Reliable Performance of Flexible Synaptic Devices Based on PVP–GO QD Nanocomposites Due to the Formation of Directional Filaments

Li,

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…The work functions of Al and ITO are 4.3 eV and 4.8 eV, respectively. 30 The HOMO, LUMO and Fermi level positions of PMMA are taken to be 7.25 eV, 1.65 eV, and 5.1 eV, respectively. 31 Schottky barriers are formed by the PMMA and the electrodes (Al and ITO).…”

Section: Resultsmentioning

confidence: 99%

Bioresistive random access memory with an in-memory computing function based on graphene quantum dots

Wang

Yang

et al. 2023

New J. Chem.

View full text Add to dashboard Cite

show abstract

“…As shown in Figure 2 b, the spectrum of the GQDs exhibits a very weak D-band peak at 1370 cm −1 , indicating the existence of local defects and lattice disorder, and another characteristic G-band peak is located near 1620 cm −1 . The intensity ratio (ID/IG) of the D peak to the G peak is 0.80, indicating high purity and a low oxidation degree of the GQDs [ 30 , 31 ].…”

Section: Resultsmentioning

confidence: 99%

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

et al. 2021

View full text Add to dashboard Cite

Nanocarbon materials have the advantages of biocompatibility, thermal stability and chemical stability and have shown excellent electrical properties in electronic devices. In this study, Al/MWCNT:GQD/ITO memristors with rewritable nonvolatile properties were prepared based on composites consisting of multiwalled carbon nanotubes (MWCNTs) and graphene quantum dots (GQDs). The switching current ratio of such a device can be tuned in two ways. Due to the ultraviolet light sensitivity of GQDs, when the dielectric material is illuminated by ultraviolet light, the charge capture ability of the GQDs decreases with an increasing duration of illumination, and the switching current ratio of the device also decreases with an increasing illumination duration (103–10). By exploiting the charge capture characteristics of GQDs, the trap capture level can be increased by increasing the content of GQDs in the dielectric layer. The switching current ratio of the device increases with increasing GQD content (10–103). The device can be programmed and erased more than 100 times; the programmable switching state can withstand 105 read pulses, and the retention time is more than 104 s. This memristor has a simple structure, low power consumption, and enormous application potential for data storage, artificial intelligence, image processing, artificial neural networks, and other applications.

show abstract

Optimization of quantum yield of highly luminescent graphene oxide quantum dots and their application in resistive memory devices

Cited by 14 publications

References 52 publications

Highly Reliable Performance of Flexible Synaptic Devices Based on PVP–GO QD Nanocomposites Due to the Formation of Directional Filaments

Highly Reliable Performance of Flexible Synaptic Devices Based on PVP–GO QD Nanocomposites Due to the Formation of Directional Filaments

Bioresistive random access memory with an in-memory computing function based on graphene quantum dots

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

Contact Info

Product

Resources

About