Improving the sensitivity and line edge roughness in inorganic positive electron beam resist

Fabrication of eight-step diffractive optical element for hologram-ROM

“…2 shows the fabrication process of the CGH-ROM. NIMO-P0701 (Tokyo Ohka Kogyo Co., Ltd., Tokyo), which is based on spin-on glass, was used as the EB resist on a silicon wafer [10].…”

“…4, were fabricated by EB doses of 37, 76, 114, 153, 190, 229, and 267 lC/cm 2 , respectively. The contrast curve of the EB dose is typically a nonlinear curve [10,16,17], which means it is difficult to control the pattern height precisely in the nonlinear area because a small variation in the EB dose generates Fig. 3.…”

Three-dimensional particle tracking around microstructures in water via total internal reflection fluorescence microscopy and refractive-index-matching method

“…Next, the resulting MEXFLON pattern was subjected to thermal nanoimprinting with a mold having a multiheight pattern fabricated by electron-beam (EB) lithography (Unno et al 2007). A 1-μm-thick layer of NIMO-P0701 (Tokyo Ohka Kogyo Co., Ltd), based on spin-on glass, was used as the inorganic positive EB resist (Ogino et al 2007). Buffered hydrofluoric acid (BHF) aqueous solution [50 % HF (35 mL/L) + 40 % NH 4 F (18.75 mL/L)] was used as the developer.…”

High resolution spin-on electron beam lithography resist with exceptional dry etching resistance

“…Among them, hydrogen silsesquioxane (HSQ) has become a rather popular choice as a negative-tone resist, owing to its sub-10 nm resolution capability in EBL and low line edge roughness (LER) [30][31][32]. Methoxysilane-based systems such as NIMO-P0701 and Accuglass 512B are other silica-based systems examples [33,34].…”