Improving the Performance of a Zinc Oxide Nanowire Ultraviolet Photodetector by Adding Silver Nanoparticles

Tzeng, Shi-Kai; Hon, Min–Hsiung; Leu, Ing‐Chi

doi:10.1149/2.088204jes

Cited by 30 publications

(27 citation statements)

References 31 publications

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“…Wang et al, 2015;Dualeh et al, 2014) and so on. For interface and structure engineering, AgNPs (Tzeng et al, 2012), graphene Fu et al, 2012), gold nanoparticles (AuNPs) (Liu et al, 2010(Liu et al, , 2009) and AgNWs have been explored to overcome the poor conductivity of electron transporting layer, thus improving the device performance.…”

Section: Introductionmentioning

confidence: 99%

Efficiency enhancement of MAPbI Cl3− based perovskite solar cell by modifying the TiO2 interface with Silver Nanowires

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Efficiency enhancement of MAPbI Cl3− based perovskite solar cell by modifying the TiO2 interface with Silver Nanowires

et al. 2016

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“…UV photoresponse was also enhanced by Ag-ZnO nanowire Schottky contact. 37 Aluminiumdoped ZnO nanorod arrays were also developed for UV photodetection. 38 According to Suobai et al, 39 the photoresponse current increases linearly with the number of nanowires (NWs) connected in parallel.…”

Section: A Introductionmentioning

confidence: 99%

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

et al. 2014

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We explored for the first time the ability of a three-dimensional polyacrylonitrile/ZnO material prepared by a low-cost and scalable synthesis method based on the combination of electrospinning and atomic layer deposition (ALD) as a new material with a large surface area to enhance the performance of UV photodetection. The UV photoresponse current was enhanced by a factor of 250 compared to a flat electrode. In addition an increase by a factor of 1.3 of the recovery time has been observed which is negligible versus the huge amount of current enhancement. The greatly improved performance and the good stability of these nanostructured electrodes induce exciting materials for use in UV sensor applications. A IntroductionUV photodetection has been widely studied in the last few years 1-10 due to its large civil and military application elds such as secure space-to-space communications, pollution monitoring, water sterilization, and ame sensing. The semiconductor based UV photodetection process is a simple physical phenomenon based on electron-hole generation into a semiconductor under photon shelling. Basically when a photon with energy larger than the one of the semiconductor band-gap is absorbed, an electron-hole pair is produced. This induces a change of the electrical conductivity properties of the semiconductor. Low band gap energy semiconductors have been widely used for UV photodetection, especially the Si-based photodetectors (E g ¼ 1.1 eV). Despite both their high sensitivity and quick response advantages, low E g UV photodetectors are sensitive to low energy photons (visible and infrared), and thus, they require the insertion of protection lters to avoid signal/ noise related to those low electron energies. Moreover an ultrahigh vacuum and a very high voltage supply were required. 11 The disadvantages of the low E g based photodetectors disappear in the high band gap semiconductors. Moreover, wide-band gap materials are both chemically and thermally stable which is an advantage for devices operating in harsh environments. [12][13][14] Among the high band gap semiconductor category, ZnO is one of the most widely used semiconductors for UV photodetection due to its high chemical stability, low cost, and large band gap of 3.37 eV at room temperature. Mollow et al. reported the rst UV photoresponse in ZnO lms in 1940. 15 Since then, many complex ZnO-based photodetectors with high performance have been reported, such as p-n junction, p-i-n junction and Schottky junction. 3,16-23 ZnO UV sensors have been prepared using different deposition techniques such as Metal Organic Chemical Vapor Phase Deposition (MOCVD), 24,25 laser assisted molecular beam deposition (LAMBD), 26 radio frequency (RF) magnetron sputtering, 27-29 atomic-layer deposition (ALD) 30 and molecular beam epitaxy (MBE). 31,32 Moreover different electrode types such as Au, Ag, Pt, Ni, Pd, Cr, Al, and Ru have been elaborated and their performances have been investigated. Nanostructured ZnO for UV detection was also investigated. They show promisi...

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“…In addition, functional devices consisting of a noble metal (e.g., Au [132,133] and Ag [134][135][136][137]) coated on semiconductor nanostructures have inspired extensive research effort. Such devices can realize superior optoelectronic properties to those without a metal coating because their LSPR effect leads to strong scattering and absorption of incident light, efficient separation of photogenerated electron-hole pairs, and rapid transport of charge carriers at the metal/semiconductor interface.…”

Section: Photodetectorsmentioning

confidence: 99%

One-Dimensional Zinc Oxide Nanomaterials for Application in High-Performance Advanced Optoelectronic Devices

et al. 2018

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Unlike conventional bulk or film materials, one-dimensional (1D) semiconducting zinc oxide (ZnO) nanostructures exhibit excellent photoelectric properties including ultrahigh intrinsic photoelectric gain, multiple light confinement, and subwavelength size effects. Compared with polycrystalline thin films, nanowires usually have high phase purity, no grain boundaries, and long-distance order, making them attractive for carrier transport in advanced optoelectronic devices. The properties of one-dimensional nanowires-such as strong optical absorption, light emission, and photoconductive gain-could improve the performance of light-emitting diodes (LEDs), photodetectors, solar cells, nanogenerators, field-effect transistors, and sensors. For example, ZnO nanowires behave as carrier transport channels in photoelectric devices, decreasing the loss of the light-generated carrier. The performance of LEDs and photoelectric detectors based on nanowires can be improved compared with that of devices based on polycrystalline thin films. This article reviews the fabrication methods of 1D ZnO nanostructures-including chemical vapor deposition, hydrothermal reaction, and electrochemical deposition-and the influence of the growth parameters on the growth rate and morphology. Important applications of 1D ZnO nanostructures in optoelectronic devices are described. Several approaches to improve the performance of 1D ZnO-based devices, including surface passivation, localized surface plasmons, and the piezo-phototronic effect, are summarized.

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Improving the Performance of a Zinc Oxide Nanowire Ultraviolet Photodetector by Adding Silver Nanoparticles

Cited by 30 publications

References 31 publications

Efficiency enhancement of MAPbI Cl3− based perovskite solar cell by modifying the TiO2 interface with Silver Nanowires

Efficiency enhancement of MAPbI Cl3− based perovskite solar cell by modifying the TiO2 interface with Silver Nanowires

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

One-Dimensional Zinc Oxide Nanomaterials for Application in High-Performance Advanced Optoelectronic Devices

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