Graphene also presents great potential in fl exible electronics, high-frequency transistors, mode-locked lasers, and many other fi elds due to its unique characteristics. [12][13][14][15] Besides graphene, TMDs possess far more variation in physical and electrical properties for their abundant components, which range from group IVB (Ti, Zr, Hf), group VB (V, Nb, Ta) to group VIB (Mo, W), combined with sulfur family elements (S, Se, Te). [16][17][18][19] In several TMDs such as MoS 2 , there is a transfer from indirect bandgap in the bulk to direct bandgap in the monolayer, along with a bandgap increase from 1.2 to 1.9 eV. [ 20 ] Recently, 2D heterostructured devices, which consist of two or more 2D materials, have also received lots of attention owing to their features of rectifying, ultrafast charge transfer, and so on. [21][22][23] Abundant electrical characteristics are always at the center of the properties of 2D materials that deserve further investigation for fundamental science and applications, and fabricating a quantifi ed device is an essential step for obtaining electrical messages from the material. However, until now, it is still a big challenge to effi ciently and easily make the desired electronic devices with simple or complicated electrode arrays. Thus, valid devicemaking recipes that can overcome the expensive and tedious EBL or UVL processes are necessary for the extensive investigation of numerous semiconductors, including 2D materials.Herein, we develop a simple photolithographic-patterntransfer (PPT) technique for fabricating micro-/nano devices, with an ordinary light source and a simple microscope. Such a PPT method can be used to effi ciently design and prepare complicated electrode arrays for (opto)electronics, and is especially suitable for 2D materials. To evaluate the quality of devices made by this method, MoS 2 FET devices were used as a template and EBL and gold-wire mask moving (GWM) methods were also employed for comparison. The mobility of our thin MoS 2 fl ake was comparable to the results of devices from EBL and better than the results of the GWM method. Further complicated device applications such as a top-gate FET, a Hall bar, and heterostructured transistors could also be easily realized based on such a method.