2015
DOI: 10.1007/s10853-015-9089-7
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Bi2S3 microflowers assembled from one-dimensional nanorods with a high photoresponse

Abstract: In this paper, Bi 2 S 3 microflowers have been successfully synthesized via a facile one-pot hydrothermal method and characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray analysis, and X-ray photoelectron spectroscopy. Then the Bi 2 S 3 microflowers were deposited on patterned ITO glass substrates by dip-coating to fabricate photodetectors. The photoresponse properties using Bi 2 S 3 microflowers as a representative system sho… Show more

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Cited by 11 publications
(8 citation statements)
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References 39 publications
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“…In order to further explore the surface compositions and chemical state of the sample, X‐ray photoelectron spectroscopy (XPS) was acquired (Figure a,b), in which the peaks of Bi and S are found. The binding energy of Bi 4 f were identified at 158.7 eV (Bi 4f 7/2 ) and 164.0 eV (Bi 4f 5/2 ) (Figure a), confirming the presence of Bi 3+ . S 2s peak around 225.8 eV can be detected for as‐prepared Bi 2 S 3 sample (Figure S1 in the Supporting Information) .…”
Section: Resultsmentioning
confidence: 99%
“…In order to further explore the surface compositions and chemical state of the sample, X‐ray photoelectron spectroscopy (XPS) was acquired (Figure a,b), in which the peaks of Bi and S are found. The binding energy of Bi 4 f were identified at 158.7 eV (Bi 4f 7/2 ) and 164.0 eV (Bi 4f 5/2 ) (Figure a), confirming the presence of Bi 3+ . S 2s peak around 225.8 eV can be detected for as‐prepared Bi 2 S 3 sample (Figure S1 in the Supporting Information) .…”
Section: Resultsmentioning
confidence: 99%
“…In our experiments, thiourea was chosen to act as the sulfide source, for constituting the Bi 3+ -thiourea complexes, initially. Under elevated temperature, these complexes decomposed, accompanied by shaping into needle-like nanospheres with nucleated Bi 2 S 3 48 49 . As time went on, Bi 2 S 3 grew gradually to improve the rough surface, at the expense of Bi 2 S 3 particles or rods.…”
Section: Resultsmentioning
confidence: 99%
“…It has a suitable band gap (E g = 1.3–1.7 eV) [ 1 ], which is very close to the optimal absorption energy band gap of solar cells [ 2 ]. The Bi 2 S 3 semiconductor can extend the absorption width of sunlight to the near-infrared band and have a high absorption coefficient [ 3 ]. Moreover, it has a relatively high carrier mobility [ 4 ].…”
Section: Introductionmentioning
confidence: 99%